Devices tunnel barrier

Parker [55] studied the IN properties of MEH-PPV sandwiched between various low-and high work-function materials. He proposed a model for such photodiodes, where the charge carriers are transported in a rigid band model. Electrons and holes can tunnel into or leave the polymer when the applied field tilts the polymer bands so that the tunnel barriers can be overcome. It must be noted that a rigid band model is only appropriate for very low intrinsic carrier concentrations in MEH-PPV. Capacitance-voltage measurements for these devices indicated an upper limit for the dark carrier concentration of 1014 cm"3. Further measurements of the built in fields of MEH-PPV sandwiched between metal electrodes are in agreement with the results found by Parker. Electro absorption measurements [56, 57] showed that various metals did not introduce interface states in the single-particle gap of the polymer that pins the Schottky contact. Of course this does not imply that the metal and the polymer do not interact [58, 59] but these interactions do not pin the Schottky barrier. 

Figure 1. The tunneling of a single electron (SE) between two metal electrodes through an intermediate island (quantum dot) can be blocked of the electrostatic energy of a single excess electron trapped on the central island. In case of non-symmetric tunneling barriers (e.g. tunneling junction on the left, and ideal (infinite-resistance) capacitor on the right), this device model describes a SE box .

Figure 10. Two-ended molecular devices with methylene tunnel barriers.

Pending further work on these new magnetic semiconductors, metallic ferromagnets are in principle, the most convenient spin polarized sources for spin device work. The obvious configuration of direct Ohmic contact between metal and semiconductor proved to have fundamental shortcomings. The conductivity mismatch between the two materials implies very indifferent spin injection efficiency [174, 175], However it transpires that this difficulty is surmountable [176] by placing a tunnel barrier between the... 

Kim, Y.E., H. Park, and J.J. Kim. 1996. Enhanced quantum efficiency in polymer electroluminescence devices by inserting a tunneling barrier formed by Langmuir-Blodgett films. AppZ Phys Lett 69 599-601. 

The phenomenon has been discussed extensively for interfaces between metals and organic semiconductors and often has major consequences to the device behavior. - In the case of molecular tunnel junctions such as PPF/molecule/Cu, it results in significantly diminished ability to vary the tunneling barrier by varying substituents on a strongly coupled aromatic molecule. As apparent from the clear difference between aromatic and aliphatic MJs shown in Figure 7.11, the electronic properties of the molecule can still have a major effect on transport, but the electronic properties of the system, consisting of both contacts and molecules, must be considered. ... 

For typical polymer LED device parameters, currenl is space charge limited if the energy barrier to injection is less than about 0.3-0.4 eV and contact limited if it is laiger than that. Injection currents have a component due to thermionic emission and a component due to tunneling. Both thermionic emission and tunneling... 

The proposed technique seems to be rather promising for the formation of electronic devices of extremely small sizes. In fact, its resolution is about 0.5-0.8 nm, which is comparable to that of molecular beam epitaxy. However, molecular beam epitaxy is a complicated and expensive technique. All the processes are carried out at 10 vacuum and repair extrapure materials. In the proposed technique, the layers are synthesized at normal conditions and, therefore, it is much less expansive. The presented results had demonstrated the possibility of the formation of superlattices with this technique. The next step will be the fabrication of devices based on these superlattices. To begin with, two types of devices wiU be focused on. The first will be a resonant tunneling diode. In this case the quantum weU will be surrounded by two quantum barriers. In the case of symmetrical structure, the resonant... 

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