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Degenerate doping

Section 10.5). The roughness frequency shows no strong dependence on doping density, while the amplitude increases from a few nm for degenerately doped material to several tens of nanometers for low doped substrates [Lel6]. [Pg.108]

CdO, the first discovered and applied transparent conductor [40], which also exhibits the highest reported conductivity (see compilation of data in [41]), is less used today because of its toxicity and its low optical band gap (EStPhotoelectron spectra indicate, however, that the band gap is 1 eV [43]. Although the (direct) optical gap is increased for degenerate doping due to the Burstein-Moss effect [44], it remains difficult to prepare noncolored CdO films. [Pg.6]

As mentioned in the preceding section the mobility of degenerately-doped zinc oxide (as well as of other TCO materials and semiconductors) is limited by ionized impurity scattering in homogeneously-doped materials. Since about 30 years it is well known that the mobility can be increased by the so-called modulation doping method, introduced by Dingle et al. [179] for GaAs/C.ai, Af As superlattice structures (for a review see [180]). [Pg.67]

The issue of Schottky barrier formation to ZnO is not treated in this chapter as such contacts are not of big importance in thin-film solar cells. This is related to the fact that in thin film solar cells metals are only used to contact highly-doped films. For degenerately doped semiconductors, the barrier heights become very small because of the large space charge associated with depletion layers in such materials. [Pg.127]

The valence band offsets for deposition of ZnO Al on CdS are 1.6eV when the ZnO Al films are prepared using pure Ar, which leads to degenerately doped material (CSZA-A and CSZA-D). Deposition of ZnO Al films with a sputter gas containing 10 % 02 results in a low doped material (see Sect. 4.2.3.1). For such deposition conditions (CSZA-B) a valence offset of 1.2eV is obtained. [Pg.160]

X-ray photoelectron spectra recorded during interface formation of magnetron sputtered Al-doped ZnO with an evaporated In2S3 substrate are shown in Fig. 4.35. The In2S3 substrate has been deposited at 250°C substrate temperature and the ZnO Al was deposited at room temperature in pure Ar, resulting in a degenerately doped film. The valence band maximum after the last deposition step (not shown) is at Ep — Eyb = 3.9 0.1 eV. [Pg.173]

Degenerate doping is further indicated by the broad structure of the Zn LMM Auger line after the last deposition step (compare Sect. 4.2.2). [Pg.174]

Interface formation between In2S3 and ZnO has also been studied for the reverse deposition sequence with Al-doped ZnO films used as substrates [70]. In this case, only degenerately doped substrates were used. Photoemission spectra indicate no chemical reactivity at the surface. [Pg.176]

Distortion of the crystalline structure of PS from that of substrate silicon is correlated with the size of the morphological structure and can be associated with a number of causes. The extent of change in lattice spacing depends on the type of PS formed. It has been found that the lattice spacing of the silicon atoms in PS is slightly larger than in the Si substrate and the expansion is about 0.04% for degenerately doped p-Si... [Pg.400]

Mesoporous Silicon This kind of porous silicon forms on heavily (degenerated) doped silicon substrates, either w" "-type or /7" -type (0.01-0.001 cm), under... [Pg.196]

Degenerate doping The amount of doping required to bring the Fermi energy level to a level comparable to the conduction band energy for electrons and the valence band energy for holes. [Pg.180]

Figure 17.4 Transfer characteristics of a bottom-contact, bottom-gate pBI I i-Cu transistor on a degenerately doped n+ silicon wafer with a 200 nm thick thermally grown Si02 dielectric L = 5 [am and W= 1000 /xm (Pt... Figure 17.4 Transfer characteristics of a bottom-contact, bottom-gate pBI I i-Cu transistor on a degenerately doped n+ silicon wafer with a 200 nm thick thermally grown Si02 dielectric L = 5 [am and W= 1000 /xm (Pt...

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See also in sourсe #XX -- [ Pg.169 , Pg.195 , Pg.199 ]




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