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Defect holes

The adopted approach consists in the realization of a set of standard defects holes situated at different depths in plan pieces, tungsten inclusions, lack of penetration, etc.(Figure 1,2). [Pg.636]

Representative spectra of the standard defects (holes) are rectilinear. The localization in depth of spectrum is diffuse. It is dense and intense if it is near the surface. [Pg.638]

A straightforward method is to incorporate ahovalent impurity ions into the crystal. These impurities can, in principle, be compensated structurally, by the incorporation of interstitials or vacancies, or by electronic defects, holes, or electrons. The possibility of electronic compensation can be excluded by working with insulating solids that contain ions with a fixed valence. [Pg.278]

Fig. 4 Schematic photonic bandgap HWG cross section of a honeycomb-type structures, where light is confined to the central defect hole, and b omnidirectional guide, where light is confined by cylindrical photonic crystal layers... Fig. 4 Schematic photonic bandgap HWG cross section of a honeycomb-type structures, where light is confined to the central defect hole, and b omnidirectional guide, where light is confined by cylindrical photonic crystal layers...
Fig. 3.4. A portion of a plate containing an elliptic hole with semi-axes lengths I and 6, under uniform stress a. The stress distribution within the plate becomes nonuniform near the defect (hole) and stresses concentrate at the tips (sharp edges at the horizontal ends) of the hole. Fig. 3.4. A portion of a plate containing an elliptic hole with semi-axes lengths I and 6, under uniform stress a. The stress distribution within the plate becomes nonuniform near the defect (hole) and stresses concentrate at the tips (sharp edges at the horizontal ends) of the hole.
Iron (II) sulphide never has the precise composition FeS—the sulphur is always present in excess. This could be due either to the inclusion in the lattice of extra, interstitial S atoms or to the omission from it of some of the Fe atoms. The second explanation is correct (Hagg and Sucksdorff, 1933), the phenomcon being an example of lattice defect (p. 152). There are two types of lattice defect. In Schottky defects, found in iron(Il) sulphide, holes are left at random through the crystal because of migration of ions to the surface. In Frenkel defects, holes are left at random by atoms which have moved to interstitial positions. Silver bromide has a perfect face-centred cubic arrangement of Br ions but the Ag+ ions are partly in interstitial positions. The effect is even more marked in silver iodide (p. 153). [Pg.158]

The full lines in Figs. 2 and 4 are fits of our data to this modified Kirchhoff-Fresnel theory. To obtain such a good fit we also have to take into account an enhanced contribution in the zeroth order which we attribute to mechanical defects (holes) of the grating which are significantly larger than the grating period. [Pg.338]

Fig. 12 (a) SEM image of a typical 2D PEG structure. Note the smaller defect hole at the center of the device, and waveguides to the left and right of the 2D PEG array, (b) Normalized transmission spectra of the PhC microcavity (A) after oxidation and silanization (B) after treatment with glutaraldehyde, and (C) after infiltration and covalent capture of ESA. Adapted from [32]... [Pg.22]

Calculations conducted on the 2D PBG structure suggested that the detection limit of the device was on the order of 2.5 fg of target, assuming a uniform coating on the surface of the pores, and a minimum detectable shift of 0.1 nm. Already impressive, this improves stUl further if target capture is confined to the defect hole... [Pg.22]

Figure 17.5 Hypothetical hybrid graphene- based on the Lerf-Klinowski model, g-CN Is type material composed of regions ranging depicted as its tri-s-triazine-based allotrope. from g-CN to graphene, including B- and N- Defect holes are included in the structures of doped graphene and GeO. The GeO region is GeO and N-doped graphene. Figure 17.5 Hypothetical hybrid graphene- based on the Lerf-Klinowski model, g-CN Is type material composed of regions ranging depicted as its tri-s-triazine-based allotrope. from g-CN to graphene, including B- and N- Defect holes are included in the structures of doped graphene and GeO. The GeO region is GeO and N-doped graphene.
General Point Defects, Lattice atoms can oscillate thermally about their ideal positions. This oscillation can be conceived in terms of the oscillation of an elastic body with the energy hv. Such elastic bodies are called phonons. Electrons and holes are especially important with nonmetallic semiconducting solids. A semiconductor is considered to be perfect when it has an empty semiconducting band. An isolated electron in a perfect solid will, of course, produce a defect. Holes are quantum states in a normally filled semiconducting band. They behave in an electric field like a positive charge. [Pg.170]

Homeotropic liquid crystal cells remain important in liquid crystal deflec-toscopy (flow detection) [155, 167]. In this case, the controlling potential is created by the defect hole and could be approximated by item 3, Table 5.2. A typical homeotropic liquid crystal cell for testing dielectric films is shown in Fig. 5.27. The defect hole creates a nonuniform field, which becomes visible against a dark background made by crossed polaroids. [Pg.289]

CujS exhibits mixed conductivity, with Oqj+ 0.2 S/cm at 420°C. The electronic condnctivity is contributed by electrons and holes. For CujS eqniUbrated with copper, = 0.16 S/cm. As the mobility of the electrons is expected to be at least an order of magnitude larger than that of the ions, we conclude that n, p A/ . Yokota also fotmd that this class ( n, p A/ ) fits the experimental data. However, for T < 100°C, Allen and Bnhks find that the class /r = A/j fits their experimental data on CujS. This indicates that at elevated temperatnies thermally excited ionic defects dominate. However, thermal excitation of defect pairs is not effective at low temperatures T < 100°C), and one kind of ionic defect (copper vacancies) is formed by deviation from stoichiometry being accompartied by electronic defects (holes). Mixed condnctivity is observed also in Cuj xSe. Direct measurement of p and (n < p) shows that p N. Copper phosphates with the NASICON or allrrarrdite type stmcture exhibit mixed condnctivity with a wide range of ratios 0/0. ... [Pg.235]

The air pressure is maintained for a period of time (2-10 min) to observe the rate of decay. A small decrease of 0.1 -0.2 psi/min is considered acceptable and is due to diffusion of the air across the microporous membrane structure (DWI, 2001). A faster decrease in pressure indicates a faulty membrane. As the membrane system is open to atmospheric pressure on the filtrate side, the airflow can be observed to confirm the location of any breach (defects, holes, or tears in the membrane). The system can be automated, but faults will only be detected in a membrane unit. If the unit is comprised of several membrane housings (larger systems may contain in excess of 100 membrane modules), additional diagnoses will be necessary to identify the failed membrane fibers. [Pg.147]


See other pages where Defect holes is mentioned: [Pg.240]    [Pg.470]    [Pg.224]    [Pg.23]    [Pg.467]    [Pg.177]    [Pg.571]    [Pg.691]    [Pg.391]    [Pg.443]    [Pg.284]    [Pg.285]    [Pg.297]    [Pg.442]    [Pg.714]   
See also in sourсe #XX -- [ Pg.3 , Pg.6 , Pg.10 ]




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