Structural compensation

A straightforward method is to incorporate ahovalent impurity ions into the crystal. These impurities can, in principle, be compensated structurally, by the incorporation of interstitials or vacancies, or by electronic defects, holes, or electrons. The possibility of electronic compensation can be excluded by working with insulating solids that contain ions with a fixed valence. 

One of the most prevalent compensation strategies is to establish a target salary that is tied to compensation for similar positions in the appropriate competitive marketplace. Market pricing is a formal process for determining the external value of a position compared to an organization s competitive market. This is a job-based method of defining compensation structure. 

Replacement of the THF ligand of a Cp2Zr(R)(THF)+ species with a two-electron donor ligand opens up an empty orbital on Zr and invariably results in a compensating structural distortion. Spectroscopic data establish that the cationic benzyl complex (C5H5)2Zr(CH2Ph)(THF)" has a normal f/ -benzyl ligand. This species reacts irreversibly with CHjCN to yield the... 

To avoid undercutting, compensating structures must be used, generally simple polygonal extensions of the mask at the convex corners. A large variety of such convex corner-compensating structures have been proposed [22, 23]. 

R. Puers, W. Sansen, Compensation structures for convex corner micromachining in silicon, Sens. Actuators 1990, A21-23, 1036-1041. 

The compensation structures of the super junction device are realized by a deep trench etch (depth 10—25 pm, width 2—4 pm) before trench-gate definition, followed by a Si epitaxial trench fill (p-doped) and CMP of the Si layer. If no polish stop layer is introduced, the pohshing has to be performed in a time-controlled manner. With a stop layer, a high-selectivity Si slurry has to be used, while in the latter case a nonselective slurry is required. Figure 18.7(a—c) show etched trenches (a), epitaxially filled with p-doped Si (b) and time-controlled polish with a Si slurry (c). 

Figure 18.7 Fabrication of the compensation structures of super junction power MOSFETs. Trench etch (a), epitaxially filled with p-doped Si (h) and after time-controlled Si CMP (c).

Figure 18.8 Schematic cross-section of a power MOSFET with field plate compensation structures (a), transistor cells with field plates (b).

B Puers and W Sansen, Compensation Structures for convex comer micromachimng in silicon. Sens Actuators A21-A22 990), 1036-1041... 

In the building industry, concrete foams are mainly used as lightweight blocks, load-compensating structures... 

Pal, P., Sato, K., Shildda, M., and Gosalvez, M.A. (2009) Study of corner compensating structures and fabrication of various shapes of MEMS structures in pure and surfactant added TMAH. Sens. Actuators A Phys., 154 (2), 192-203. 

A method to fabricate a photo-patterned organic compensator for liquid crystal displays, and the resulting compensator structure, are described. One illustrative fabrication method comprises (1) depositing a thin film of polymerizable liquid crystal material onto one of a display s substrates ... 

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