Dc properties

This chapter is dedicated to the basics of the silicon-electrolyte contact, with emphasis on the semiconductor side of the junction. The phenomenology of the I-V curve is discussed, together with basic charge states of semiconductor electrode like accumulation, depletion and inversion. Electrostatic and electrodynamic properties will be described, with emphasis on the direct current (DC) properties of the semiconductor electrode, while alternating current (AC) properties are discussed in Section 10.2. Details of charge exchange and mass transport as well as details of the reactions at the microscopic level are considered in Chapter 4. 

Note that the dialog box says that the property we are changing is the DC property. To change the property, type in the desired value. We will create a 12-volt source, so type in 12 ... 

The error message says that the DC property of Vi is undefined. Click the OK button to close the dialog box ... 

Moreno AP, Laing JG, Beyer EC, Spray DC Properties of gap junction channels formed of connexin 45 endogenously expressed in human hepatoma (SKHepl) cells. Am J Physiol 1995 268 C356-C365. 

DC properties of experimental epoxy resin/carbon black systems... 

The DC properties of anti-static epoxy GFR pipes The use of glass-fibre reinforced (GFR) epoxy resin pipes is, especially in tankers, hampered by the bad electrostatic properties of these pipes. The possibility to decrease the volume resistivity to an acceptable level using only a small amount of carbon black (see 5.3.2) resulted in the development of the WAVIMAR anti-static GFR pipe system by Wavin BV. This pipe system is based on a liquid DGEBA/MDA (100/27) and cured for two hours at 120°C, containing about 1.5 %wt. (on the resin phase) of Ketjen black EC-2000 carbon black. The specific volume resistivity of a sample of such a pipe was measured as a function of the direction, the field strength and the pipe wall thickness. 

Two types of high electron mobility transistors (HEMTs) with 2D electron gas were made from AlGaN/GaN heterostructures grown by MOCVD on Si (111) substrates, and their electrical DC properties were compared. Optical study, namely photoluminescence, photoreflection and reflection spectroscopy of the structures was performed. The strain values in GaN layers (6.6 and 1.7 kBar) and electric field strength near the heterointerface (470 and 270kV/cm) were determined. A correlation between the HEMTs DC characteristics and the optical properties of GaN layers was demonstrated. 

Optical and electrical DC properties of AlGaN/GaN HEMTs fabricated from heterostructures grown on Si (111) substrates by MOCVD were studied. The correlation between the optical properties and electrical performances of the structures was established. An increased concentration of nonradiative centers, strains and electric field in the GaN layer correspond to worse 2DEG properties. The main origin of the increased defect density is assumed to be insufficient compensation of the stress caused by the Si substrate. 

At 86% RH, the conductance is almost independent of frequency (dominated by DC properties) up to 1 kHz, and at 7% and 62%, only a small increase at the highest frequencies can be detected. The susceptance is increasing linearly at the highest... 

The electrode itself may be the end of a metal needle or the end of a fluid-filled glass capillary (micropipet). The electrical characteristics of these two types are very different, and they have their characteristic application areas. The metal electrode has poor DC properties, and is best for recording fast action potentials. The micropipet electrode is better suited for reeording DC or slowly varying DC potentials (Figure 7.38). 

Electrochemical impedance measurement systems used for the analysis of the ac properties of electrochemical cells typically consist of a potentiostat (sometimes called an electrochemical interface) together with a frequency response analyzer (FRA) or a spectrum analyzer, or even a combination of the two. The potentiostat provides buffered connections to the cell under investigation together with circuitry for applying a controlled voltage or current stimulus and for the measurement of the dc properties of the cell. The FRA is connected through the potentiostat to the cell and therefore the bandwidth of the potentiostat is a very important consideration for accurate high frequency analysis. 

Manghnani M H and Yagi T (eds) 1998 Properties of Earth and Pianetary Maferfa/s (Washington, DC American Geophysical Union)... 

Graessley W W 1993 Viscoelasticity and flow in polymer melts and concentrated solutions Physical Properties of Polymers ed J E Mark et al (Washington, DC ACS) pp 97- 143... 

Y. Wang. Computational Approach to the Influence of the Distdfl.dc Bond on Peptide Properties. PhD thesis. University of Kansas, 1997. 

Isbell, W.M., Christman, D.R., Babcock, S.G., Michaels, T.E., and Green, S.J., Measurements of Dynamic Properties of Materials, Vol 1 Summary of Results, US Defense Atomic Support Agency Report No. DASA-2501-1, Washington, DC, 28 pp., July 1970. 

Proceedingsof the Annual International AlChE Meeting, Washington, DC, November 27-December 2, 1988 edited by M.L. Occelli and R.G. Anthony Volume 51 NewSolid Acids and Bases. Their Catalytic Properties by K. Tanabe, M. Misono, Y. Ono and H. Hattori Volume 52 Recent Advances in Zeolite Science. Proceedings of the 1989 Meeting of the British Zeolite Association, Cambridge, April 17-19,1989 edited by J. Klinowsky and P.J. Barrie... 

Daitomaceous Earth. .. Loss on ignition, 11.50. Diatomaceous Earth -Physical Properties. Bulk Density, 0.26 gm/cc. Temperature Resistance, 1400 DC.. .. http //www.infoindia.com/uff/daito.html... 

B01 L.M. Barker and R.E. Hollenbach, J. Appl. Phys. 41, 4208-4226 (1970). 70B02 R.R. Boade, Experimental Shock Loading Properties of Porous Materials and Analytical Methods to Describe these Properties, Sandia Laboratories Report No. SC-DC-70-5052, August, 1970. 

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