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Current/voltage characteristics films

FIG. 10 Current-voltage characteristics of polyanihiies LS films of 40 monolayers deposited on interdigitated electrodes (1) PANI, (2) POT, (3) POAS, (4) PEOA. [Pg.152]

Enpuku, K., Kisu, T., Sako, R., Yoshida, K., Takeo, M. and Yamafuji, K., Effect of Flux Creep on Current-Voltage Characteristics of Superconducting Y-Ba-Cu-O Thin Films, Jpn. J. Appl. Phys. 28 L991 (1989). [Pg.671]

An STM probe has been used to isolate individual MS (M = Cd, Pb) particles and to measure electronic phenomena (55,56,81). The MS films were prepared either by exposure of metal ion/fatty acid films to H2S (55,56) or by transfer of a compressed DDAB-complexed CdS monolayer (81). All the films were transferred onto highly oriented pyrolytic graphite (HOPG) for the STM measurements. A junction was created at an individual CdS particle with the STM tip as one electrode and the graphite as the other, and the current/voltage characteristics of the panicles were measured. For the particle prepared in the fatty acid films the I/V curves exhibit step-like features characteristic of monoelectron phenomena. In the case of the DDAB-coated CdS particles the I/V measurements demonstrated n-type semiconductor behavior. The absence of steps in this system is probably a reflection of the larger size of the particles in the DDAB films (8 nm by AFM) compared to the 2-nm particle size typically found for MS particles formed in fatty acid films. [Pg.273]

Fig. 9.9 Current-voltage characteristics under chopped illumination (= AMI) of a nanocrystalline (4—5 nm) CdSe film, deposited by CD, in a polysulphide electrolyte. The two characteristics are for as-deposited CdSe (top) and after etching with dilute HCl (bottom). (After Ref. 67.)... Fig. 9.9 Current-voltage characteristics under chopped illumination (= AMI) of a nanocrystalline (4—5 nm) CdSe film, deposited by CD, in a polysulphide electrolyte. The two characteristics are for as-deposited CdSe (top) and after etching with dilute HCl (bottom). (After Ref. 67.)...
Fig. 9.10 Chopped illumination (100 mW-cm ) current-voltage characteristics of a nanocrystalline PbSe fihn deposited from a citrate/selenosulphate bath at 60°C. The electrolyte is the original solution from which the film was deposited. (After Ref. 83.)... Fig. 9.10 Chopped illumination (100 mW-cm ) current-voltage characteristics of a nanocrystalline PbSe fihn deposited from a citrate/selenosulphate bath at 60°C. The electrolyte is the original solution from which the film was deposited. (After Ref. 83.)...
Figure 6. Effect of chemisorption of Ru3 on the grain boundaries of a chemically vapor-deposited, thin-film n-GaAs photoanode. The grains are of 3-5 pm in size. The current-voltage characteristics shown are for the n-GaAs/0.8M KnSe-0.1 M KsSet-lM KOH/C cell. ((-------------) freshly etched (---) Ru3 chemisorbed)... Figure 6. Effect of chemisorption of Ru3 on the grain boundaries of a chemically vapor-deposited, thin-film n-GaAs photoanode. The grains are of 3-5 pm in size. The current-voltage characteristics shown are for the n-GaAs/0.8M KnSe-0.1 M KsSet-lM KOH/C cell. ((-------------) freshly etched (---) Ru3 chemisorbed)...
Figure 7. Current-voltage characteristics of an n-GaAs/0.8M KiSe-0.1 M KtSet-iyi KOH/C cell made with a chemically vapor-deposited, thin film of n-GaAs on... Figure 7. Current-voltage characteristics of an n-GaAs/0.8M KiSe-0.1 M KtSet-iyi KOH/C cell made with a chemically vapor-deposited, thin film of n-GaAs on...
Tunneling junctions are most often produced in a crossed stripe geometry so that 4-terminal measurements of their current-voltage characteristics can be made. Electrical contacts are made to the films ( often with miniature brass "C" clamps ), the samples are mounted in a Dewar insert, and cooled to liquid helium temperatures ( 4.2 ° K or below ). [Pg.218]

Fig. 10.24. Current-voltage characteristics from a nanoscale organic transistor formed by contact of a metal coated stamp against a thin film of the organic semiconductor pentacene. The gate voltage varies between +1.0 V and... Fig. 10.24. Current-voltage characteristics from a nanoscale organic transistor formed by contact of a metal coated stamp against a thin film of the organic semiconductor pentacene. The gate voltage varies between +1.0 V and...
A new thin-film technique for reducing the effects of ohmic heating on measurements of the i-v (or current-voltage) characteristics of conductive liquids at sinusoidal fields up to 500 v/cm. [Pg.269]

Figure 4.15. Top Cross section of a MISS diode. The device can be regarded as a reverse-biased metal-insulator-semiconductor diode in series with a for-ward-biased n-p Junction. It then exhibits two stable states separated by an unstable negative resistance region. Bottom Current-voltage characteristics for a GaAs-(j -TA MISS device. The LB film thickness is approximately 9 nm... Figure 4.15. Top Cross section of a MISS diode. The device can be regarded as a reverse-biased metal-insulator-semiconductor diode in series with a for-ward-biased n-p Junction. It then exhibits two stable states separated by an unstable negative resistance region. Bottom Current-voltage characteristics for a GaAs-(j -TA MISS device. The LB film thickness is approximately 9 nm...
Colloidal dispersions and thin films containing PEPC, PVC and Ag-Au nanoparticles were prepared and investigated by transmission electron microscopy (TEM) and UV-Vis-IR spectroscopy. Current-voltage characteristics... [Pg.196]

The analysis of current-voltage characteristics provides new insight into conductivity control in thin poly(diphenylenephthalide) films by changing voltage on the middle electrode. Thus, possibility of nonconjugate polymer application in thin-film vertical transistor has been shown. [Pg.572]

I. Methanol vapor-induced morphology and current-voltage characteristic changes in a cast-coated Nation film/interdigitated microarray electrode. J. Polym. Sci. B Polym. Phys. 2002, 40, 1103. [Pg.1685]

Effects of Plasma-Polymerized Film on the Current-Voltage Characteristics of Single Probe... [Pg.115]

Figure 3. Current-voltage characteristics for plasma-polymerized hexameihyl-disilazane (film thickness 0.87 m)... Figure 3. Current-voltage characteristics for plasma-polymerized hexameihyl-disilazane (film thickness 0.87 m)...

See other pages where Current/voltage characteristics films is mentioned: [Pg.208]    [Pg.21]    [Pg.262]    [Pg.152]    [Pg.10]    [Pg.471]    [Pg.48]    [Pg.336]    [Pg.339]    [Pg.149]    [Pg.208]    [Pg.69]    [Pg.114]    [Pg.417]    [Pg.312]    [Pg.319]    [Pg.70]    [Pg.81]    [Pg.295]    [Pg.177]    [Pg.206]    [Pg.376]    [Pg.419]    [Pg.5]    [Pg.212]    [Pg.208]    [Pg.108]    [Pg.201]    [Pg.15]    [Pg.115]    [Pg.115]    [Pg.124]    [Pg.418]   
See also in sourсe #XX -- [ Pg.1044 ]

See also in sourсe #XX -- [ Pg.1044 ]




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Current-voltage

Film characteristics

Voltage characteristics

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