Transistor, thin film vertical

The analysis of current-voltage characteristics provides new insight into conductivity control in thin poly(diphenylenephthalide) films by changing voltage on the middle electrode. Thus, possibility of nonconjugate polymer application in thin-film vertical transistor has been shown. 

Gamier, R, Hajlaoui, R., and El Kassmi, M., Vertical device architecture by molding of organic-based thin film transistor, App. Phys. Lett. 73, 1721-1723, 1998. 

Kudo, K., M. lizuka, S. Kuniyoshi, and K. Tanaka. 2001. Device characteristics of lateral and vertical type organic field effect transistors. Thin Solid Films 393 362-367. 

Watanabe, Y, H. lechi, and K. Kudo. 2008. Characteristics of organic inverters using vertical- and lateral-type organic transistors. Thin Solid Films 516 2729-2732. 

In the TN system, since the vertical electric field is applied to the upper and lower ITO electrodes sandwiching the liquid crystal layer, the field distribution is homogeneous in the in-plane direction, and one can calculate the electric field in the liquid crystal layer with a fixed potential boundary vertical to the ITO electrode. On the other hand, in the IPS case, there is no electrode at all on the upper substrate (color filter side), and also on the lower substrate (thin-film transistor side) in the parts between the comb electrodes. The electric field generated by the comb electrodes has to be calculated including the liquid crystal layer and thus portion includes a significant area of the upper and lower substrates as shown in Fig. 10.32 [68]. ... 

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