Contacts solar cells

Back contact solar cell, 23 46 Back-end volatility, 12 398-399 Backflow, 11 323 Backflow bag filters, 26 709 Background-limited IR photodetector (BLIP), 19 135... 

Fig. 1 Buried contact solar cell structure, an important wafer-based commercial silicon cell technology. Features include surface texturing for light trapping, diffusions front and rear and the front current grid buried in laser grooves. (Courtesy of UNSW Centre for Photovoltaic Engineering Image Library.)...

Figure 5.13 illustrates this concept in comparison to a nanowire with a continuous, conformal-contact and a planar point-contact solar cell. 

Swanson, R. M., Point-contact solar-cells—Modelhng and experiment Solar Cells 1986,17, 85-118. 

King, R. R. Sinton, R. A. Swanson, R. M. In Front and Back Surface Fields for Point-Contact Solar Cells, Photovoltaics Specialists Conference, IEEE. 1988 pp. 538-544. 

Copper Sulfide—Cadmium Sulfide. This thin-film solar cell was used in early aerospace experiments dating back to 1955. The Cu S band gap is ca 1.2 eV. Various methods of fabricating thin-film solar cells from Cu S/CdS materials exist. The most common method is based on a simple process of serially overcoating a metal substrate, eg, copper (16). The substrate first is coated with zinc which serves as an ohmic contact between the copper and a 30-p.m thick, vapor-deposited layer of polycrystaUine CdS. A layer is then formed on the CdS base by dipping the unit into hot cuprous chloride, followed by heat-treating it in air. A heterojunction then exists between the CdS and Cu S layers. 

Following the same procedure, the kinetic constants have been determined for very different electrochemical conditions. When n-WSe2 electrodes are compared in contact with different redox systems it is, for example, found9 that no PMC peak is measured in the presence of 0.1 M KI, but a clear peak occurs in presence of 0.1 M K4[Fe(CN)6], which is known to be a less efficient electron donor for this electrode in liquid junction solar cells. When K4[Fe(CN)6] is replaced by K3[Fe(CN)6], its oxidized form, a large shoulder is found, indicating that minority carriers cannot react efficiently at the semiconductor/electrolyte junction (Fig. 31). 

The optical properties of electrodeposited, polycrystalline CdTe have been found to be similar to those of single-crystal CdTe [257]. In 1982, Fulop et al. [258] reported the development of metal junction solar cells of high efficiency using thin film (4 p,m) n-type CdTe as absorber, electrodeposited from a typical acidic aqueous solution on metallic substrate (Cu, steel, Ni) and annealed in air at 300 °C. The cells were constructed using a Schottky barrier rectifying junction at the front surface (vacuum-deposited Au, Ni) and a (electrodeposited) Cd ohmic contact at the back. Passivation of the top surface (treatment with KOH and hydrazine) was seen to improve the photovoltaic properties of the rectifying junction. The best fabricated cell comprised an efficiency of 8.6% (AMI), open-circuit voltage of 0.723 V, short-circuit current of 18.7 mA cm, and a fill factor of 0.64. 

Fig. 3.18 Schematic outline and ideal band diagram of an extremely thin absorber solar cell. The n-Ti02 crystallites are clustered together to form a relatively open, network-like morphology, accommodating a thin layer of CdTe absorber, with p-ZnTe at the back contact. (Reprinted from [270], Copyright 2009, with permission from Elsevier)...

Electrolyte contacts have been used to characterize as-deposited and annealed CdS/CdTe solar cell structures by photocurrent spectroscopy and electrolyte elec-troabsorbance/electroreflectance measurements (EEA/EER) [267-269]. 

Once the silicon disc is cleaned, the first step is diffuse ions into either side of the silieon disc to first form either the p-layer or the n-layer. Some manufacturers like to have the n-layer closer to the light source, as shown in the above diagram, while others prefer the opposite. At any rate, ions like and are generally used to form the active electrical layers. A number of differing processes have been developed to do this, the exact nature of which depending upon the speeific manufacturer of solar cells. Sputtering, vapor-phase and evaporation are used. The most common process uses a volatile boron or phosphorous compound to contact the surface. 

The low efficiencies could be due to lack of intimate contact (interface) between the sensitizer (which is hydrophilic) and the spirobifluorene (which is hydrophobic). Moreover, the surface charge also plays a significant role in the regeneration of the dye by the electrolyte.98 In an effort to reduce the charge of the sensitizer and improve the interfacial properties between the surface-bound sensitizer and the spirobifluorene hole-carrier, amphiphilic heteroleptic ruthenium(II) complexes ((48)-(53)) have been used as sensitizers. These complexes show excellent stability and good interfacial properties with hole-transport materials, resulting in improved efficiencies for the solar cells. 

---