Conduction mechanism oxides

Several kinds of conduction mechanisms are operative in ceramic thermistors, resistors, varistors, and chemical sensors. Negative temperature coefficient (NTC) thermistors make use of the semiconducting properties of heavily doped transition metal oxides such as n-ty e Ti O andp-ty e... 

The results of several studies were interpreted by the Poole-Erenkel mechanism of field-assisted release of electrons from traps in the bulk of the oxide. In other studies, the Schottky mechanism of electron flow controlled by a thermionic emission over a field-lowered barrier at the counter electrode oxide interface was used to explain the conduction process. Some results suggested a space charge-limited conduction mechanism operates. The general lack of agreement between the results of various studies has been summari2ed (57). 

Manometric and volumetric methods (kinetics) Thermogravimetry (kinetics from very thin films to thick scales stoichiometry) Electrical conductivity of oxides and allied methods (defect structures conduction mechanisms transport numbers) Radioactive tracers and allied methods (kinetics self diffusion markers)... 

The work of Christensen and Hamnett (1991) provided the first positive evidence for bipolarons and showed, for the first time, that the oxidation of polypyrrole was accompanied by a dramatic decrease in the film thickness, linking this with the generation of these carriers. Taken in addition to all the work discussed above their work provided some of the final pieces in a workable theory of the conduction mechanism in polypyrrole. 

Oxides play many roles in modem electronic technology from insulators which can be used as capacitors, such as the perovskite BaTiOs, to the superconductors, of which the prototype was also a perovskite, Lao.sSro CutT A, where the value of x is a function of the temperature cycle and oxygen pressure which were used in the preparation of the material. Clearly the chemical difference between these two materials is that the capacitor production does not require oxygen partial pressure control as is the case in the superconductor. Intermediate between these extremes of electrical conduction are many semiconducting materials which are used as magnetic ferrites or fuel cell electrodes. The electrical properties of the semiconductors depend on the presence of transition metal ions which can be in two valence states, and the conduction mechanism involves the transfer of electrons or positive holes from one ion to another of the same species. The production problem associated with this behaviour arises from the fact that the relative concentration of each valence state depends on both the temperature and the oxygen partial pressure of the atmosphere. 

The superconducting oxides include both perovskites and Ruddlesden-Popper compounds which have an orthorhombic arrangement of cubic cells, alternatively of the perovskite and sodium chloride structures. The common feature of all of these is the presence of copper as a major component. The first ceramic superconductor was a lanthanum-strontium substituted cuprate (Lai Sr Cu04 z), which is a perovskite, but subsequently the inter-oxide compound Y203 2BaO 3CuO, commonly referred to as a 123 compound, was shown to have superior performance. The speculation concerning the conduction mechanism is that this involves either Cu3+-Cu2+ positive hole... 

The resulting materials have approximately equal ionic and electronic contributions to the total conductivity at doping levels between Ce0.8Pro.202-s and Ce0.75Pr0.25O2-s. The electronic conductivity mechanism in these oxides is believed to be by way of electron hopping between Pr4+ and Pr3+. 

An example of a layer structure mixed conductor is provided by the cathode material L CoC used in lithium batteries. In this solid the ionic conductivity component is due to the migration of Li+ ions between sheets of electronically conducting C0O2. The production of a successful mixed conductor by doping can be illustrated by the oxide Cei-jPxx02- Reduction of this solid produces oxygen vacancies and Pr3+ ions. The electronic conductivity mechanism in these oxides is believed to be by way of electron hopping between Pr4+ and Pr3+, and the ionic conductivity is essentially vacancy diffusion of O2- ions. 

H.S. Kwok, X.W. Sun, and D.H. Kim, Pulsed laser deposited crystalline ultrathin indium tin oxide films and their conduction mechanisms, Thin Solid Films, 335 299-302, 1998. 

Another conductivity mechanism could be suggested for LB films of this polymer with Ag+ cations. Such cations can accept or release electrons easily, so in the layer of such cations the conductivity could be caused by electron transitions between the ions with different degrees of oxidation. With tunneling microscopy an anomaly in the dl/dV(V) curves near zero bias was discovered for the LB films in Ag form with an odd number of layers there was a conductivity peak some 150-200 mV wide (Figure 7.4, Curves 1, 3) but no anomaly for these same films with an even number of layers (Figure 7.4, Curve 2). For LB films with an odd number of layers the ordered superstructure of the scale 11.5 x 11.5 x lO cm has been found in a conductivity dl/dV (x,y) measurement regime. The scale of such a structure corresponds to 3 x 2 surface reconstruction (Figure 7.5). 

There are five possible physical phases in the current path in which the current conduction mechanisms are different as illustrated in Figure 19. They are substrate, space charge layer, Helmholtz layer, surface oxide film, and electrolyte. The overall change in the applied potential due to a change of current density in the current path is the sum of the potential drops in these phases ... 

The different oxide stacking sequences in j8 and j8". Fig. 2.9, and in particular, the presence of mirror symmetry in the conduction plane of j8 but not P", lead to differences in detail in the nature of the sites for Na" ions in the conduction plane. Such differences together with the different charge compensation mechanisms cause the electrical properties of p and P" to differ somewhat, and in particular lead to rather different conduction mechanisms. 

---