Chemically amplified positive resist system

A chemically amplified, positive-working resist system based on silylated polyhydroxystyrene has shown its capability for application to quarter micron lithography. The present paper describes the recent improvement in the resist performance achieved through studies on polymer characteristics and process conditions. Possible measures to suppress a peculiar problem of positive-working chemical amplification systems, i.e., formation of T-shaped profile, is also presented. Although the development is still on the way, the silylated polyhydroxystyrene based resist tem shows excellent properties on resolution capability, sensitivity and process latitude. 

Acid-C t lyzed Chemistry. Acid-catalyzed reactions form the basis for essentially all chemically amplified resist systems for microlithography appHcations (61). These reactions can be generally classified as either cross-linking (photopolymerization) or deprotection reactions. The latter are used to unmask acidic functionality such as phenohc or pendent carboxyhc acid groups, and thus lend themselves to positive tone resist apphcations. Acid-catalyzed polymer cross-linking and photopolymerization reactions, on the other hand, find appHcation in negative tone resist systems. Representative examples of each type of chemistry are Hsted below. 

A chemically amplified deep UV photoresist system based on acetal chemistiy is reported. Acetal-protected pol vinylphenols) were prepared either by free radical polymerization of the monomers or chemical modification of poly(vinylphenol). In the presence of an add as a catalyst, the polymers thermally decomposed to aqueous base soluble po vinylphenol) and some small molecules. Therefore, the resists were formulated with the acetal-protected polymers and a photoadd generator such as triphei lsulfonium hex-afluoroantimonate. Positive-tone image could be resolved 1 exposing the resist film in deep UV region, post-baking, and developing in tetramethylam-monium hydroxide solutions. 

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