Chemical vapour deposition precursors

Vapour Pressures of Chemical Vapour Deposition Precursors... 

Chemical Vapour Deposition Precursors and Their Classification... 

Jones AC, Hitchman ML (2008) Chemical vapour deposition precursors, processes and applications. RSC Publishing, London, doi 10.1039/9781847558794... 

Jones, A.C., Hitchman, M.L., 2009. Chemical Vapour Deposition Precursors, Processes and Applications. Royal Society of Chemistry. 

Compounds like ds-[PdMe2(PR3)2] (R = Me, Et) have been suggested as chemical vapour deposition (CVD) precursors for palladium [108b]. 

Incorporation of nitrogen into the carbons prepared via chemical vapour deposition (CVD) or into the carbon nanotubes yields highly graphitised materials with excellent structure ordering. For example, ordered mesoporous carbons containing 7.0-8.8 wt,% N have been obtained by the CVD method, using the SBA-12, SBA-15, MCM-41, MCM-48, and HMS materials as matrices and acetonitrile as carbon precursor [1],... 

Applications involving ring transfer or loss. The kinetic lability, volatility, and Lewis acidity of heavy alkaline earth metallocenes have been the properties most important to their applications. The gas-phase decomposition of volatile metallocenes is useful in the preparation of thin films of alkaline earth-containing materials and in doping semiconductors. Reviews are available on the use of group 2 organometallic compounds as precursors for chemical-vapour deposition (CVD).2 3... 

In a review by Gonsalves el al. (2000), techniques for the fabrication of nano-structured materials are outlined. Synthesis from corresponding organo-metal precursors of nano-structured metals (Fe, Co, Ni) and alloys (Fe-Co, Pt-Pd, and special steels) are discussed and various methods considered such as thermal decomposition, ultrasonic irradiation, chemical vapour deposition, laser pyrolysis and reduction. 

Singh HB, Sudha N (1996) OrganoteUurium precursors for metal organic chemical vapour deposition (MOCVD) of mercury cadmium telluride (MCT). Polyhedron 15(5-6), 745-763... 

Methyltrichlorosilane (CH3SiCl3, MTS) is an appropriate precursor to deposit SiC-layers on various carrier materials using chemical vapour deposition. MTS is decomposed according to the following overall equation of reaction ... 

J. P. Gorrichon, and A. Gleizes, Preliminary Study of (Ni(en)3) (CP3CO,), and Ni(en) (hfpd)2 as Precursors for Metalorganic Chemical Vapour Deposition, Structural Properties and Thermal Behaviors, Inorganica Chimical Acta, Vol.248, 1996, pp.15-21. 

The bis-Cp titanium bis(/-butanethiolato) and bis(ethanethiolato) complexes have been used as a single-source precursors for the preparation of thin films of titanium sulfides by metal-organic chemical vapour deposition (MOCVD). The crystal and molecular structures of the precursor complexes have been determined for comparison with homologous complexes of the general formula Cp2Ti(SR)2.1618... 

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