Chemical vapor deposition thermal reactor

The most simple methods for preparation of hafnium carbide and its composites are the follows. The powder of HfO was thermally treated with Mg in molar ratio 5 4 under a CH flow ranging from 800 to 950 °C [4]. The effective high temperature coating for carbon fiber reinforced carbon and carbon fibre reinforced silicon carbide was prepared with use of HfC [5]. For this purpose hafnium carbide layers were obtained in a thermally simulated chemical vapor deposition (CVD) reactor on nonporous substrates by reaction of hafnium tetrachloride, methane and addition of hydrogen (Eq. 10.1) ... 

For illustrative purposes, the process of deposition of Si onto graphite is being used as an example. The 15 pm natural graphite precursors were introduced into the industrial size chemical vapor deposition reactor, where a thermal decomposition of silane (SiH4) into the silicon and hydrogen was taking place under inert gas in accordance with the equation (1) ... 

Stagnation flows represent a very important class of flow configurations wherein the steady-state Navier-Stokes equations, together with thermal-energy and species-continuity equations, reduce to systems of ordinary-differential-equation boundary-value problems. Some of these flows have great practical value in applications, such as chemical-vapor-deposition reactors for electronic thin-film growth. They are also widely used in combustion research to study the effects of fluid-mechanical strain on flame behavior. 

In chemical vapor deposition (CVD) reactive vapor precursors react to produce solid materials in the gas phase or at the solid-gas interface on the substrate surface at appropriate temperatures. Typical precursors used in the CVD process are metal hydrides, metal chlorides, and metal organic compounds. In the case that the precursor species are metal organic compounds, the process is called metal-organic chemical vapor deposition (MOCVD). The precursor molecules are introduced into a reactor sometimes with a carrier gas and decompose by means of heat, irradiation of UV light, or electrical plasma formed in the gas. Thermal CVD is the most commonly used method. This technique has an advantage that refractory materials can be vapour-deposited at relatively low temperatures,... 

The manufacture of cubic p-SiC, which is favored at temperatures below 2000°C, or mixtures of a- and p-SiC is carried out by deposition from the gas phase (Chemical Vapor Deposition). p-SiC powder with good sintering properties and small crystallite size is e.g. obtained by the thermal decomposition of alkyl silanes or alkyl dichlorosilanes in plasmas or flow reactors at temperatures above 1000°C ... 

In this study, the silica membranes to apply for HI decomposition reaction was investigated, and prepared by the sol-gel and the thermal chemical vapor deposition (CVD) methods. The objective of this work is to study the characteristics of the silica membrane preparation and the hydrogen permselectivity of the membrane reactor used for HI decomposition in the thermochemical water splitting IS process. 

The thermal decomposition of organic compounds can also be employed to generate small carbon clusters or atoms. The borderline with chemical vapor deposition (CVD) as presented in the next section is not really fix. In both cases, the method is based on the thermal decomposition of organic precursors. Processes both with and without catalyst have been reported. Contrary to the chemical vapor deposition, however, the catalyst (if applied) is not coated onto a substrate, but the substance or a precursor is added directly to the starting material ( floating catalyst ). The resulting mixture is then introduced into the reactor either in solid or in liquid state by a gas stream. From this point of view the HiPCo-process could also be considered a pyrolytic preparation of SWNT, but due to its importance it is usually regarded as autonomous method. 

Preparation of uranium metal. As discussed previously, some nuclear power plant reactors such as the UNGG type have required in the past a nonenriched uranium metal as nuclear fuel. Hence, such reactors were the major consumer of pure uranium metal. Uranium metal can be prepared using several reduction processes. First, it can be obtained by direct reduction of uranium halides (e.g., uranium tetrafluoride) by molten alkali metals (e.g., Na, K) or alkali-earth metals (e.g.. Mg, Ca). For instance, in the Ames process, uranium tetrafluoride, UF, is directly reduced by molten calcium or magnesium at yoO C in a steel bomb. Another process consists in reducing uranium oxides with calcium, aluminum (i.e., thermite or aluminothermic process), or carbon. Third, the pure metal can also be recovered by molten-salt electrolysis of a fused bath made of a molten mixture of CaCl and NaCl, with a solute of KUFj or UF. However, like hafnium or zirconium, high-purity uranium can be prepared according to the Van Arkel-deBoer process, i.e., by the hot-wire process, which consists of thermal decomposition of uranium halides on a hot tungsten filament (similar in that way to chemical vapor deposition, CVD). 

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