Chemical-liquid deposition

Z. (1996) Chemical liquid deposition zeolites with controlled pore-opening size and shape-selective separation of isomers. Ind. Eng. Chem. Res., 35, 430. 

Copper, silver, and gold colloids have been prepared by Chemical Liquid Deposition (CLD) with dimethoxymethane, 2-methoxyethyl ether, and ethylene glycol dimethyl ether. The metals are evaporated to yield atoms which are solvated at low temperatures and during the warm-up process colloidal sols with metal clusters are obtained. Evaporation of the solvent was carried out under vacuum-generating metal films. These films are showing very low carbon/hydrogen content and were characterized by elemental analyses and infrared spectroscopy (Cardenas et al., 1994). 

Y.H. Yue, Y. Tang, and Z. Gao, Zeolite Pore Size Engineering by Chemical Liquid Deposition, Progress in Zeolite and Microporous Materials. Stud. Surf. Sci. Catal., Part C, 1996, 105, 2059-2065. 

There have been a number of synthetic protocols for the preparation of transition-metal nanoparticles, for example, vapor condensation, sonochemical reduction, chemical liquid deposition, reflux alcohol reduction, decomposition of organometallic precursors, hydrogen reduction, etc. Of these, the colloidal reduction route provides a powerful platform for the ready manipulation of particle structure and functionalization. One excellent example is the biphasic Brust method, in which nanoparticles are formed by chemical reduction of a metal salt precursor in the presence of stabilizing ligands. In a typical reaction, a calculated amount of a metal salt precursor is dissolved in water, and the metal ions are then transferred into the toluene phase by ion-pairing with a... 

This chapter focuses on chemical liquid deposition methods that involve controlled covering of surfaces with a chemical liquid solution, here the sol-gel solution, of known composition. Once deposited, the large surface area of exchange created at the film/air interface induces a fast equilibration of the volatile species between the layer and the atmosphere. Fast solvent evaporation is. 

LPE = liquid-phase epitaxy, MOCVD = metalorganic chemical vapor deposition, VPE = vapor-phase epitaxy. 

Chemical vapor deposition competes directly with other coating processes which, in many cases, are more suitable for the application under consideration. These competing processes comprise the physical vapor deposition (PVD) processes of evaporation, sputtering, and ion plating, as well as the molten-material process of thermal spray and the liquid-phase process of solgel. A short description of each process follows. For greater detail, the listed references should be consulted. 

Many semibatch reactions involve more than one phase and are thus classified as heterogeneous. Examples are aerobic fermentations, where oxygen is supplied continuously to a liquid substrate, and chemical vapor deposition reactors, where gaseous reactants are supplied continuously to a solid substrate. Typically, the overall reaction rate wiU be limited by the rate of interphase mass transfer. Such systems are treated using the methods of Chapters 10 and 11. Occasionally, the reaction will be kinetically limited so that the transferred component saturates the reaction phase. The system can then be treated as a batch reaction, with the concentration of the transferred component being dictated by its solubility. The early stages of a batch fermentation will behave in this fashion, but will shift to a mass transfer limitation as the cell mass and thus the oxygen demand increase. 

This procedure, with minor variations, is repeated dozens of times in the manufacture of a semiconductor chip. The chemical treatment can be carried out using reagents in a liquid phase, but gas-phase treatment by a process known as chemical vapor deposition (CVD) has become more important as individual features in the integrated circuit become smaller. 

Metal and polysilicon films are formed by a chemical-vapor deposition process using organometallic gases that react at the surface of the IC structure. Various metal silicide films may also be deposited in this manner by reaction with the surface of the silicon wafer to form metal silicides. Glass and pol3uner films are deposited or spin cast or both, as are photoresist films (those of a photosensitive material). This process is accomplished by applying a liquid polymer onto a rapidly rotating wafer. The exact method used varies from manufacturer to manufacturer and usually remains proprietary. 

Solid deposition from gas- or liquid-phase reactants Solid-deposition reactions are important in the formation of coatings and fdms from reactive vapors (called chemical vapor deposition or CVD) and of pure powders of various solids. Examples are ... 

Liquid precursors, in chemical vapor deposition, 22 153 Liquid products, safe storage of, 21 855-856... 

---