Chemical amplification of resist lines CARL

Sebald, R. Sezi, R. Leuschner, H. Ahne, and S. Birkle, Chemical amplification of resist lines (CARL), Microelectronic Eng. 11, 531 (1990) M. Sebald, R. Leuschner, R. Sezi, H. Ahne, and... 

Chemical amplification of resist lines (CARL) process scheme... 

An interesting variation on the hilayer resist concept is the chemical amplification of resist lines (CARL) process, developed at Siemens (see Fig. 17.8). In the CARL process, a top imaging layer resist formulated from an alternating polymer of maleic anhydride and an appropriate monomer, depending on the... 

The biasing technique by silylation to print features smaller than the nominal size was first reported from Siemens in 1990 [466]. In the CARL (Chemical Amplification of Resist Lines) process an imaging layer containing anhydride is silylated in solution with bis(aminosiloxane) either after exposure (Top-CARL)... 

The postexposure-based techniques are grouped into three broad categories, namely, reflow-based. shrink techniques, chemical-based shrink techniques, and plasma-assisted shrink techniques. The reflow-based shrink techniques comprise thermally induced reflow and electron-beam heating-induced reflow of patterned resist features. The chemical-based shrink techniques comprise those techniques that either increase or decrease the sidewall thickness of already patterned resist features, thus effectively altering their critical dimension. Examples of chemical-based shrink techniques that result in an increase in the sidewall of the patterned features include techniques based on RELACS (resolution enhancement of lithography assisted by chemical shrink) and CARL (chemical amplification of resist lines).Examples of chemical-base shrink techniques that result in decrease... 

S. Birkle, Chemical amplification of resist lines a novel sub half micron bilayer resist technique for NUV and deep UV lithography, Proc. SPIE 1262, 528 (1990) M. Sebald, H. Berthold, M. Beyer, R. Leuschner, Ch. Ndlscher, U. Scheler, R. Sezi, H. Ahne, and S. Birkel, Application aspects of the Si CARL bilayer process, Proc. SPIE 1466, 227 237 (1991) R. Leuschner, M. Beyer, H. Bomdorfer, E. Kiihn, Ch. Nolscher, M. Sebald, and R. Sezi, CARL resist A technology for optical quarter micron resolution and below, in Proc. SPE Reg. Tech. Conf. Photopolym., Ellenville, NY, pp. 215 224(1991). 

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