Chemical amplification of resist lines

Name of 248 nm positive chemical amplification photoresists Chemical amplification of resist lines... 

The biasing technique by silylation to print features smaller than the nominal size was first reported from Siemens in 1990 [466]. In the CARL (Chemical Amplification of Resist Lines) process an imaging layer containing anhydride is silylated in solution with bis(aminosiloxane) either after exposure (Top-CARL)... 

The postexposure-based techniques are grouped into three broad categories, namely, reflow-based. shrink techniques, chemical-based shrink techniques, and plasma-assisted shrink techniques. The reflow-based shrink techniques comprise thermally induced reflow and electron-beam heating-induced reflow of patterned resist features. The chemical-based shrink techniques comprise those techniques that either increase or decrease the sidewall thickness of already patterned resist features, thus effectively altering their critical dimension. Examples of chemical-based shrink techniques that result in an increase in the sidewall of the patterned features include techniques based on RELACS (resolution enhancement of lithography assisted by chemical shrink) and CARL (chemical amplification of resist lines).Examples of chemical-base shrink techniques that result in decrease... 

Sebald, R. Sezi, R. Leuschner, H. Ahne, and S. Birkle, Chemical amplification of resist lines (CARL), Microelectronic Eng. 11, 531 (1990) M. Sebald, R. Leuschner, R. Sezi, H. Ahne, and... 

S. Birkle, Chemical amplification of resist lines a novel sub half micron bilayer resist technique for NUV and deep UV lithography, Proc. SPIE 1262, 528 (1990) M. Sebald, H. Berthold, M. Beyer, R. Leuschner, Ch. Ndlscher, U. Scheler, R. Sezi, H. Ahne, and S. Birkel, Application aspects of the Si CARL bilayer process, Proc. SPIE 1466, 227 237 (1991) R. Leuschner, M. Beyer, H. Bomdorfer, E. Kiihn, Ch. Nolscher, M. Sebald, and R. Sezi, CARL resist A technology for optical quarter micron resolution and below, in Proc. SPE Reg. Tech. Conf. Photopolym., Ellenville, NY, pp. 215 224(1991). 

An interesting variation on the hilayer resist concept is the chemical amplification of resist lines (CARL) process, developed at Siemens (see Fig. 17.8). In the CARL process, a top imaging layer resist formulated from an alternating polymer of maleic anhydride and an appropriate monomer, depending on the... 

Chemical Amplification All resists must comply with numerous additional requirements, referring among others to radiation sensitivity, resolution, contrast, aspect ratio, line edge roughness (LER), heat resistance, and shelf-life. With regards to the large-volume fabrication of microdevices, chemical... 

The diazido-ort/io-naphthoquinone/novolac (DNQ/ novolac) photoresists have been the workhorse for the semiconductor industry for over 30 years and still continue to be the most widely used photoresists today. ° They may be utilized with different exposure wavelength technologies I-line (365 nm), G-line (436 nm), and even 248 nm. Although productivity requirements for the technology with 248 nm exposure have demanded the transfer to photoresists with a chemical amplification, the DNQ-novolac resists still remain to be the most widely used and constantly finding new areas of implementation. The modern state-of-the-art in the microdevices technology gives an opportunity to use the DNQ-novolac resists to print features as small as 0.25 In addition, these photoresists in the form... 

Fig. 178 Scanning electron micrographs of sub-100 nm features printed in chemical amplification resists 60 nm line/space patterns by phase shifting 157 nm lithography [511], 70 nm line/space patterns by X-ray lithography [513], and 70 nm line/space patterns by EUV lithography [514]...

This study explores the feasibility of developing positive tone resists that can be cast and developed from water alone. Its purpose is to determine which approaches might be suitable for the design of a positive tone water-soluble resist. Each of the components of an eventual resist are explored separately with the help of model reactions to develop guidelines for the design of an eventual positive-tone water-soluble resist system. Since neither the matrix resin (Novolac) nor the photoactive compound (diazonaphthoquinone) components of classical i-line resists (7) are water soluble, resists incorporating chemical amplification (2,3) were targeted. 

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