Auger spectrum after

Figure 6. Auger spectrum after electrodeposition of Cu on Ru(0001) from an electrolyte of 0.2 M HC104 and 0.96 mM Cu2+. The sample was emersed without rinsing at 40 mV (SCE). (Data from ref. 16.)...

The rate of ammonia synthesis on this crystal face lies between those of the (111) and (110) faces. It was found to have an activity of approximately Ath that of the Fed 11) face, and its activity increased by nearly a factor of 2 after deliberate disordering of the surface by argon ion bombardment (Table 2). Using the PID limit of detection for activity on the (110) face, we obtain activity ratios of 418 25 1 for Fe(lll) Fed00) Fe(110). As with the other two surfaces, nitrogen was present in the Auger spectrum after all synthesis runs on this plane. 

Figure 5.31. An Auger spectrum from a stainless steel surface (a) the undifferentiated N(E) mode, (b) the differentiated mode. (After Flewitt and Wild 1985.)...

FIG. 45. Auger spectrum for Au(lOO) (A) after ion bombardment and annealing, (B) after emersion following Cd UPD, (C) after emersion following first Te UPD, (D) after emersion following Cd UPD on first Te UPD, and (E) after emersion following Cd UPD on second Te UPD. (From Ref. 162.)... 

For a compound semiconductor to be useful as a substrate in studies of electrodeposition, it is desirable that clean, unreconstructed, stoichiometric surfaces be formed in solution prior to electrodeposition. For CdTe, the logical starting point is the standard wet chemical etch used in industry, a 1-5% Brj methanol solution. A CdTe(lll) crystal prepared in this way was transferred directly into the UHV-EC instrument (Fig. 39) and examined [391]. Figure 66B is an Auger spectrum of the CdTe surface after a 3-minute etch in a 1% Br2 methanol solution. Transitions for Cd and Te are clearly visible at 380 and 480 eV, respectively, as well as a small feature due to Br at 100 eV. No FEED pattern was visible, however. As described previously, a layer of solution is generally withdrawn with the crystal as it is dragged (emersed) from solution (the emersion layer). After all the solvent has evaporated, the surface is left with a coating composed of the... 

The mechanism we believe is responsible for the large SiOj-to-Si etch-rate ratios which have been obtained in fluorine-deficient discharges is based on several experimental observations. First of all, it has been shown that there are several ways in which carbon can be deposited on surfaces exposed to CF, plasmas. One way is to subject the surface to bombardment with CF ions which are the dominant positive ionic species in a CF plasma. The extent to which this can occur is shown by the Auger spectra in Fig. 3.3. Curve (a) is the Auger spectrum of a clean silicon surface and curve (b) is the Auger spectrum of the same surface after bombardment with 500 eV CFj" ions. Note that the silicon peak at 92 eV is no longer visible after the CFj bombardment indicating the presence of at least two or three monolayers of carbon. Another way in which carbon can be deposited on surfaces is by dissociative chemisorption of CFj or other fluorocarbon radicals. 

The XPS/Auger spectrum of a membrane prior to reaction revealed the presence of sulfur uniformly distributed throughout the palladium as an impurity (see Figure 5a). Spectra of the membrane after reaction at 200°C for forty hours indicated that both surfaces of the membrane had been preferentially enriched with traces of sulfur (see Figure 5b). Depthprofiling experiments revealed the formation of a trace sulfur surface layer which is approximately 20 A thick. Spectraof both the raw and usedfoils showed carbon on the surface, however the concentration was too low to differentiate from possible sample contamination. 

Fig. 4.14. Auger electron spectra of SiOj. (a) Comparison of experimental (solid line) Si LVV Auger spectrum with that calculated (dashed line) (b) major Auger transitions arising from individual molecular orbitals (after Ramaker et al., 1979 reproduced with the publisher s permission).

Fig. 1. Auger spectrum of hydrogen sulfide (after Thompson et al., 1976 )...

Fig. 3. Auger spectrum of sulfur adsorbed on a polycrystalline/nickel surface (sub monolayer range). The insert figure shows the- ectrum in the neighbourhood of sulfur at higher resolution and expanded scale (after Coad and Riviere, 1972 b...

Figure 1. The Auger spectrum of GaAs photoanode after Pt modification.

Fig. 35. The Auger spectrum of TbNis after use as a methanation catalyst. The Ni signal at 830V is weak before sputtering it intensifies with sputtering. The Carbon signal at —270 V behaves in an opposite way (Wallace, 1978).

X-ray-excited Auger emission A secondary electron emission process that follows the photoionization and appears as a peak in the X-ray photoelectron spectrum. After the initial photoemission, an upper level valence electron relaxes into the vacant core-level state, followed by an ejection of another electron in the valence level. 

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