Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Auger electron spectroscopy electronic devices

L.M. Do, E.H. Han, Y. Niidome, and M. Fujihira, Observation of degradation processes of A1 electrodes in organic electroluminescence devices by electroluminescence microscopy, atomic force microscopy, scanning electron microscopy, and Auger electron spectroscopy, J. Appl. Phys., 76 5118-5121, 1994. [Pg.634]

For a better characterization of the catalytic surface, the sample has been transferred through a glove box into an ultra high vacuum device and Auger electron spectroscopy was carried out. [Pg.296]

However, it seems that the use of the combined electrochemical pre-chamber/UHV main chamber device seems to be the best for these treatments. One of the methods consists of applying the same treatment to platinum single crystals for separate experiments. For characterization, low-energy electron diffraction, Auger electron spectroscopy, or XPS was used. Conventional electrochemical experiments were followed with the analysis of the results by taking into account the effect of the unavoidable differences in the required conditions. [Pg.237]

The films and devices were characterized by inductive-coupled plasma spectrometry (ICP), Auger electron spectroscopy (AES), X-ray diffraction, electron-probe microanalysis (EPMA), current-voltage characteristics, and spectral response. [Pg.310]

In recent development of the semiconductor industries, thermal oxide film thickness of less than 5 nm has been used in semiconductor devices such as metal-oxide-semiconductor (MOS) structures. Thickness of less than 5 nm is almost near the thickness of a native oxide film on the surface of silicon wafer. Therefore the characterization of ultra thin native oxide film is important in the semiconductor process technology. The secondary electron microscopy (SEM), the scanning Auger electron microscopy (SAM), the atomic force microscopy (AFM) and the X-ray photoelectron spectroscopy (XPS) might be the useful characterization method for the surface of the silicon wafers. [Pg.61]

Acoustic Wave Devices Auger Electron Spectroscopy Infrared Spectroscopy Modulation Photochemistry, Molecular Pollution, Air... [Pg.406]


See other pages where Auger electron spectroscopy electronic devices is mentioned: [Pg.444]    [Pg.74]    [Pg.337]    [Pg.92]    [Pg.556]    [Pg.242]    [Pg.309]    [Pg.243]    [Pg.2]    [Pg.183]    [Pg.12]    [Pg.353]    [Pg.559]    [Pg.1156]    [Pg.1418]    [Pg.1387]    [Pg.1415]    [Pg.155]    [Pg.155]    [Pg.60]    [Pg.196]    [Pg.150]    [Pg.3]    [Pg.834]    [Pg.129]    [Pg.192]   
See also in sourсe #XX -- [ Pg.238 ]




SEARCH



Auger

Auger electron

Auger electron spectroscopy devices

Auger electron spectroscopy devices

Electron devices

Electronic devices electronics

Spectroscopy Auger

Spectroscopy Auger electron

© 2024 chempedia.info