Argon laser beam

Figure 9.8 Schematic illustration of the two-dimensional HPLC/fast-CZE instmmental setup. The argon laser beam was set at 488 nm, which was used to photodegrade and detect the fluorescein isothiocyanate tag.

Fig. 13. A P-doped film with pairs of spots recorded at different argon laser beam intensities. The lower micrograph depicts the spots after chemical etching. [After Staebler (1979).]...

Fig. 3.9 Raman spectroscopy of liquid samples in a thin capillary fiber (a) production of the fiber (b) incoupling of an argon laser beam with a microscope objective into the fiber and imaging of the outcoupled radiation into a spectrometer (c) fiber with liquid [320]...

The small magnetic hfs in the E state of a homonuclear diatomic molecule is caused by the interaction of the nuclear spins / with the weak magnetic field produced by the rotation of the molecule. For the Nai molecular ground state the hyperfine splittings are smaller than the natural linewidth of the optical transitions. They could nevertheless be measured by the laser version of the Rabi technique [10.21]. A polarized argon laser beam at A, = 476.5 nm crosses the sodium beam and excites the Na2 molecules on the transition X = 0, 7" = 28) n (v = 3,7 = 27). The hfs... 

We have observed a complex structure and an extraordinarily large divergence (30-40 ) of an argon-laser beam emerging from an OCBP crystal placed at a focal constriction. The experimental results can be explained by a reorientation of the director in the electric field of the light wave. 

In [141], a simple probe-pump laser technique was proposed to investigate the change of Xb in CLCs under the influence of intense laser radiation. An argon laser beam (A = 514 nm), incident normal to the liquid crystal cell, was used as a pump beam, and an oblique incident laser beam from a laser diode X = 670 nm) as a probe beam. A nonabsorbing isothiocyanate mixture with 5 = 510 nm was investigated. An increase of the pitch at very low laser intensities (100 700 mW) was observed which depends on the polarization of the beam. 

After deposition of polysilicon by LPCVD, phosphorus ions are implanted in order to determine the threshold voltage. A finely focused CW argon laser beam was scanned on the layer. Successive fabrication steps are carried out by the standard N-chan-nel MOS LSI technology. The pixel electrode is formed with the ITO layer. 

During the operation of a patient, the optimum concentration and composition of narcotic gases can be indicated by the composition of the respiratory gases, i.e. with the concentration ratio of N2 02 C02. This ratio can be measured in vivo with Raman spectroscopy [15.119]. The gas flows through a cell which is placed inside a multipass arrangement for an argon-laser beam (Fig. 15.21). In a plane perpendicular to the beam axis several detectors with special spectral filters are arranged. Each detector monitors a selected Raman line which allows the simultaneous detection of all molecular components of the gas. 

---