Argon carrier gas

The first form of aerosol modifier is a spray chamber. It is designed to produce turbulent flow in the argon carrier gas and to give time for the larger droplets to coalesce by collision. The result of coalescence, gravity, and turbulence is to deposit the larger droplets onto the walls of the spray chamber, from where the deposited liquid drains away. Since this liquid is all analyte solution, clearly some sample is wasted. Thus when sensitivity of analysis is an issue, it may be necessary to recycle this drained-off liquid back through the nebulizer. 

On the high-pressure side of the nozzle molecules may be seeded into the jet of helium or argon and are also cooled by the many collisions that take place. However, in discussing temperature in molecules, we must distinguish between translational, rotational and vibrational temperatures. The translational temperature is the same as that of the helium or argon carrier gas and may be less than 1 K. 

The fluorescence excifafion spectra in Figures 9.47(a) and 9.47(b) show the Ojj bands of the A B2 X Ai system of aniline (see Figure 5.19) and the aniline Ar complex in a skimmed supersonic jet of aniline seeded into the argon carrier gas. 

The gas chromatograph (GC) is a Hewlett-Packard 5890 GC with a thermal conductivity detector. A 5A mole sieve column is used with argon carrier gas this gives peaks going in the same direction for both hydrogen and nitrogen. 

That hydrogen is responsible for the large reduction of the dangling bond density in amorphous silicon is demonstrated by studies of films grown by sputtering of silicon with an inert gas (Paul et al., 1976). When hydrogen is added to the argon carrier gas, the spin density is reduced to 1016/cm3, and the films can be doped. In contrast, sputtered amorphous... 

HC1 w/saturated potassium persulfate 1% N8311 /0.2 K0H Argon Carrier Gas... 

The laboratory layout consists of a molecular beam apparatus and a laser system. NaK clusters are created in an adiabatic coexpansion of mixed alkali vapour and argon carrier gas through a nozzle of 70 pm diameter into the vacuum. Directly after the nozzle the cluster beam passes a skimmer. Next, the laser beam coming from perpendicular direction irradiates the dimers and eventually excites and ionizes them. The emerging ions are extracted by ion optics, mass selected by QMS and recorded by a computer. 

A very intense inductively coupled plasma (ICP) could be created, using a 13.56-MHz RF-source and coupling the power through a quartz tube into the plasma. Working pressure was 2 x 10-2 mbar and the substrate could be heated up to 800 °C [222]. The precursor was trimethylborazine ((HBN-CH3)3), which was transported in a nitrogen/argon carrier gas. Similar to other deposition processes, prior to the c-BN nucleation an oriented h-BN layer was formed [223]. 

The starting powders were fed with a PRAXAIR powder feeder through an injection probe to the top of the plasma flame by argon carrier gas (3 lmin-1) with a constant feed rate of 10 g min-1. The outlet of the quartz injection tube of an inner diameter of 2 mm, was located 10 mm below the top of the induction coil. 

To improve some separations, it has been found that heating the argon carrier gas through the transfer line may improve GC separations [88,91 ] (Fig. 10.13). 

An Arrhenius plot of the deposition rate vs reciprocal absolute temperature is shown in Fig. 2. Depositions were made by indicated pressures with or without carrier gas. One notices in all cases that above 190 °C the deposition rate of several A/s was found with an activation energy of about 50-60 kJ mol". Below this temperature a strong decrease of the deposition rate was found. It did not matter whether the gas phase consisted of pure precursor or of a mixture of organometallic compound and argon carrier gas. Only the value of the deposition rate was varying with the different pressures which can be explained by the amount of precursor in the gas phase. Similar results (Fig. 3) were also obtained with in situ X-ray photoelectron spectroscopy (ESCA) studies, which indicate a sharp shift of the binding energy as an onset of the start of decomposition of the precusor at around 190 °C. 

BiPhj has a vapour pressure of 1 torr at 98 °C and is carried to the deposition site in an argon carrier gas. At the deposit site the atmosphere is dioxygen. Natori and coworkers used dipivaloylmethanato (DMP) derivatives of the other metals, viz Sr(DMP)2 Ca(DMP)2 and Cu(DMP)2. The deposition site was held at 800 °C and the film had a superconducting onset temperature (T ) of llOK. Hamaguchi and collaborators also used PhjBi, but employing the hexafluoroacetylacetonate derivatives of the other metals. 

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