Amorphous dielectrics

The modeling of hopping conductivity of real amorphous dielectrics of limited thickness, with or without the incorporated space charge, has recently been done by Parkhutik and Shershulskii.62... 

The negative resistance effect is observed when anodic oxides are subjected to so-called electroforming (i.e., annealing in vacuum).93 Such a treatment removes the special features of the anodic oxides (asymmetry of conduction and electric strength, electret effect, etc.), and the negative resistance effect may be explained using the general approach developed for amorphous dielectrics.5... 

Figure 10.6 An experimental setup for localizing active charge centers (electron drops) in the amorphous dielectric layer to induce FDB effect in the LiNbC>3 crystal.

Other loss mechanisms must be considered. For examples the background loss in amorphous dielectrics due to anharmonic coupling of the electric field to acoustic phonons may be of importance also in these materials (Amrhein and Mueller (1968) Amrhein (1969) Austin and Garbett (1971)). 

S. Hunklinger, H. Sussner, and K. Dransfeld, "New Dynamic Aspects of Amorphous Dielectric Solids," in Advances in Solid State Physics XVI, Pergamon-Vieweg (1976). 

The heat transfer via the solid backbone of aerogels depends on the backbone stmcture and connectivity (Chap. 21), and its chemical composition. For a given temperature gradient within an aerogel, heat is transferred by diffusing phonons via the chains of the aerogel backbone, where the mean free path of the phonons is far below the dimensions of the mostly amorphous, dielectric primary particles. Within the primary particles, the thermal conductivity is a property of the backbone material and is described in terms of the phonon diffusion model by Debye [7], i.e., ... 

Melting temperature, °C Crystalline Amorphous Specific gravity Water absorption (24 h), % Dielectric strength, kV mm ... 

Transitions. Samples containing 50 mol % tetrafluoroethylene with ca 92% alternation were quenched in ice water or cooled slowly from the melt to minimise or maximize crystallinity, respectively (19). Internal motions were studied by dynamic mechanical and dielectric measurements, and by nuclear magnetic resonance. The dynamic mechanical behavior showed that the CC relaxation occurs at 110°C in the quenched sample in the slowly cooled sample it is shifted to 135°C. The P relaxation appears near —25°C. The y relaxation at — 120°C in the quenched sample is reduced in peak height in the slowly cooled sample and shifted to a slightly higher temperature. The CC and y relaxations reflect motions in the amorphous regions, whereas the P relaxation occurs in the crystalline regions. The y relaxation at — 120°C in dynamic mechanical measurements at 1 H2 appears at —35°C in dielectric measurements at 10 H2. The temperature of the CC relaxation varies from 145°C at 100 H2 to 170°C at 10 H2. In the mechanical measurement, it is 110°C. There is no evidence for relaxation in the dielectric data. 

Polycarbonates are an unusual and extremely useful class of polymers. The vast majority of polycarbonates are based on bisphenol A [80-05-7] (BPA) and sold under the trade names Lexan (GE), Makrolon (Bayer), CaUbre (Dow), and Panlite (Idemitsu). BPA polycarbonates [25037-45-0] having glass-transition temperatures in the range of 145—155°C, are widely regarded for optical clarity and exceptional impact resistance and ductiUty at room temperature and below. Other properties, such as modulus, dielectric strength, or tensile strength are comparable to other amorphous thermoplastics at similar temperatures below their respective glass-transition temperatures, T. Whereas below their Ts most amorphous polymers are stiff and britde, polycarbonates retain their ductiUty. 

The relatively high volatility of Tg[CH = CH2]8 has enabled it to be used as a CVD precursor for the preparation of thin films that can be converted by either argon or nitrogen plasma into amorphous siloxane polymer films having useful dielectric propertiesThe high volatility also allows deposition of Tg[CH = CH2]g onto surfaces for use as an electron resist and the thin solid films formed by evaporation may also be converted into amorphous siloxane dielectric films via plasma treatment. ... 

The refractive index of amorphous silicon is. within certain limits, a good measure for the density of the material. If we may consider the material to consist of a tightly bonded structure containing voids, the density of the material follows from the void fraction. This fraction / can be computed from the relative dielectric constant e. Assuming that the voids have a spherical shape, / is given by Bruggeman [61] ... 

Upadhyay et al. [98] used primarily correlated XPS and water contact angle measurements to study the surface degradation and recovery of amorphous films of a PMMA and a poly (aryl ether ether ketone) (PEEK). Surface modification of the films was carried out in a dielectric barrier discharge (DBD) unit, samples being treated with different dose levels of dielectric discharge. The modified (treated) samples were then stored for one month and re-examined. Figure 35 shows C(ls) and 0(1 s) XPS envelopes and their curve-fitting deconvolutions,... 

One approach to the production of high-performance dielectrics relies on the use of mixed-metal, multiple-component oxides. These oxides provide convenient means for controlling the dielectric-constant breakdown-field product through incorporation of components that specifically contribute to performance via dielectric constant or breakdown. At the same time, the mixed materials can inhibit crystallization, resulting in deposition of amorphous films with extremely flat surfaces. Common candidates, base oxides for tuning these properties, are listed in Table 4.1. 

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