Surface absorption coefficients

Transmission. The spectral transmission of glass is determiaed by reflectioa at the glass surfaces and the optical absorption within the glass. Overall transmission of a flat sample at a particular wavelength is equal to (1 — R), where P is the absorption coefficient, t the thickness of glass, and... 

One advantage of the impedance tube test methods is the small (usually <10 cm (4 ia.) dia) size of the test samples. For these tests sound impinges on the test sample only at normal iacidence to the surface, and the sound-absorption coefficients derived ia this manner are vaUd only at this angle. 

Thickness. The traditional definition of thermal conductivity as an intrinsic property of a material where conduction is the only mode of heat transmission is not appHcable to low density materials. Although radiation between parallel surfaces is independent of distance, the measurement of X where radiation is significant requires the introduction of an additional variable, thickness. The thickness effect is observed in materials of low density at ambient temperatures and in materials of higher density at elevated temperatures. It depends on the radiation permeance of the materials, which in turn is influenced by the absorption coefficient and the density. For a cellular plastic material having a density on the order of 10 kg/m, the difference between a 25 and 100 mm thick specimen ranges from 12—15%. This reduces to less than 4% for a density of 48 kg/m. References 23—27 discuss the issue of thickness in more detail. 

Another parameter of relevance to some device appHcations is the absorption characteristics of the films. Because the k quantum is no longer vaUd for amorphous semiconductors, i -Si H exhibits a direct band gap (- 1.70 eV) in contrast to the indirect band gap nature in crystalline Si. Therefore, i -Si H possesses a high absorption coefficient such that to fully absorb the visible portion of the sun s spectmm only 1 p.m is required in comparison with >100 fim for crystalline Si Further improvements in the material are expected to result from a better understanding of the relationship between the processing conditions and the specific chemical reactions taking place in the plasma and at the surfaces which promote film growth. 

Assuming the approximate absorption coefficient of solar radiation to be 0.65, for a light-grey external surface, having collected soot and dirt over a period of time, as in ANSI-C-37-24 the approximate temperature rise on account of solar radiation... 

Depth resolution depends on the (spectrally dependent) optical absorption coefficient of the material. Near-surface analysis (first 50 nm) frequendy can be per-... 

In this expression, z is the distance from the surface into the sample, a(z) is the absorption coefficient, and S, the depth of penetration, is given by Eq. 2. A depth profile can be obtained for a given functional group by determining a(z), which is the inverse Laplace transform of A(S), for an absorption band characteristic of that functional group. 

Rate of Absorption = Absorption Coefficient X Surface Area X Driving Force... 

The rate of heat conduction is further complicated by the effect of sunshine onto the outside. Solar radiation reaches the earth s surface at a maximum intensity of about 0.9 kW/ m. The amount of this absorbed by a plane surface will depend on the absorption coefficient and the angle at which the radiation strikes. The angle of the sun s rays to a surface (see Figure 26.1) is always changing, so this must be estimated on an hour-to-hour basis. Various methods of reaching an estimate of heat flow are used, and the sol-air temperature (see CIBSE Guide, A5) provides a simplification of the factors involved. This, also, is subject to time lag as the heat passes through the surface. 

The penetration of ions from the subphase into the shell of spread particles is a general phenomenon and can be used to modify and functionalize the particle surface. For example, metal ions, such as Ba and Fe, or cationic polyelectrolytes, such as the polycation of polyallylamine, can be adsorbed at anionic particles, while anionic water-soluble dyes, such as phthalocyanine tetrasulfonic acid and 1.4-diketo-3.6-diphenylpyrrolo[3.4-c]pyrrole-4, 4 -disulfonic acid (DPPS) [157], can be adsorbed at cationic particles. However, since only a monolayer of the dye is adsorbed, a deep coloration of the particles is not obtained unless a dye with very high absorption coefficient is used [156],... 

For determination of the number of protonic sites and Lewis acid sites on the surface, the integrated absorbances of the bands at 1450 cm-i (due to pyridine chemisorbed on Lewis acid sites, L-Py) and 1490 cm i (due to both the L-Py and pyridine chemisorbed on protonic acid sites, B-Py) were used with the tangent background for all samples. The values obtained were normalized to the weight of the sample wafer. To obtain the apparent absorption coefficients of the bands, a known amount of pyridine was adsorbed on the sample, and the absorbance of each band was measured. Then, a small quantity of water which is sufficient to convert all Lewis acid sites into protonic acid sites was introduced into the IR-... 

GL 25] ]R 8] [P 27] After irradiation for only 5 s, high conversions (> < obtained [21]. This is explained as being due to both the high absorption coefficient of the photosensitizer Bengal Rose and the high local number density of photons within the micro channel as a result of the large specific surface area. 

Now we are in a position to calculate the absorption coefficient with displaced harmonic potential surfaces using Eq. (2.38). Substituting the... 

When all these factors contribute, the situation becomes almost hopelessly complicated. The simplest realistic case is that in which the photocarriers are generated in the space-charge region and migrate to the surface, where they are immediately consumed by an electrochemical reaction. We consider this case in greater detail. Suppose that light of frequency i/, with hu > Eg, is incident on a semiconducting electrode with unit surface area under depletion conditions (see Fig. 8.8). Let Iq be the incident photon flux, and a the absorption coefficient of the semiconductor at frequency v. At a distance x from the surface, the photon flux has decreased to Iq exp(—ax), of which a fraction a is... 

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