Silicon Carbide Wafers

K. V Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, et al., Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nature Materials,... 

The research at MIT has been done in the cold-wall vertical tube reactor shown in Figure 14. The wafer is aligned almost parallel to the flow on a vertical silicon carbide-coated susceptor. The wafer is heated by optical radiation from high-intensity lamps to a temperature of 775°C. Silane was introduced... 

Just as in the new Applied Materials reactor, the problem being addressed is the reduced throughput with conventional epi reactors as wafers get larger. In this reactor configuration, 50 wafers can be placed on the 25 tapered cavities placed radially within the bell jar. There are resistance heaters above and below the silicon carbide-coated graphite wafer holders, and heat loss at the outer periphery is compensated for with external heat lamps. 

Thermal oxidation of the two most common forms of single-crystal silicon carbide with potential for semiconductor electronics applications is discussed 3C-SiC formed by heteroepitaxial growth by chemical vapour deposition on silicon, and 6H-SiC wafers grown in bulk by vacuum sublimation or the Lely method. SiC is also an important ceramic ana abrasive that exists in many different forms. Its oxidation has been studied under a wide variety of conditions. Thermal oxidation of SiC for semiconductor electronic applications is discussed in the following section. Insulating layers on SiC, other than thermal oxide, are discussed in Section C, and the electrical properties of the thermal oxide and metal-oxide-semiconductor capacitors formed on SiC are discussed in Section D. 

Kusunoki, M., High-density and well-aligned carbon nanotube films on silicon-carbide wafers. Journal of the Ceramic Society of Japan, 2005.113(1322) 637-641. 

Silicon carbide (SiC) is a compound semiconductor device well suited for high-temperature, high-frequency, and high-power device applications. The degree of crystallinity is an important property of silicon carbide (SiC) compound semiconductor materials. LCTF Raman chemical imaging has been employed to measure the distribution of SiC polycrystallinity and polytypes within SiC wafers [56]. 

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