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Variable angle spectroscopic ellipsometry

The uniformity of such an OVPD film of Alq3 is shown in Fig. 9.6. Analysis by variable angle spectroscopic ellipsometry (VASE) confirmed the surface was smooth across the entire substrate area with thickness deviation of +1.7%, a standard deviation, a, of 1.0% only. Atomic force microscopic analysis of such a typical film revealed RMS values to be 6 A, i.e. thickness differences in the range of a single monolayer only, irrespective of deposition rate [20-22]. [Pg.208]

To obtain the morphology information, including phase separation and crystalline, we can now use microscopic techniques, atomic force microscopy, transmission electron microscopy, electron tomography, variable-angle spectroscopic ellipsometry. X-ray photoemission spectroscopy, and grazing-incidence X-ray diffraction. The detailed information of this characterization methods can be found from the specific reference (Li et al., 2012 Huang et al., 2014). [Pg.162]

Muller F, Bimer A, Gosele U, Lehmann V, Ottow S, Foil H (2000) Structuring of macroporous silicon for applications as photonic crystals. J Porous Mater 7 201-204 Nassiopoulu AG, Kaltsas G (2000) Porous silicon as an effective material for thermal isolation on bulk crystalline silicon. Phys Stat Solidi (a) 182 307 Nava R, de la More MB, Taguena-Martinez J, del Rio JA (2009) Refractive index contrast in porous silicon multilayers. Phys Stat Solidi C6 1721-1724 Pettersson L, Hultman L, Arwin H (1998) Porosity depth profiling of thin porous silicon layers by variable angle spectroscopic ellipsometry a porosity graded layer model. Appl Optics 37(19) 4130 136... [Pg.453]

Parratt LG (1954) Surface studies of solids by total reflection of X-rays. Phys Rev 95 359 Pettersen LA, Hultman L, Arwin H (1998) Porosity depth profiling of thin porous silicon layers by use of variable angle spectroscopic ellipsometry a porosity graded-layer model. Appl Opt 37 4130... [Pg.893]

In order to deposit the SBDC photoiniferter on the hydroxy-lated Si/Si02 substrates from the vapor phase, a 10 /tL drop of the photoiniferter was placed in a desiccator, which was evacuated for 60 s with a rotary vane pump to evaporate residual solvent. Thereafter, the freshly cleaned Si/Si02 substrates were placed around the SBDC drop, and the desiccator was evacuated again, this time for 60 min (p 10 mbar). After closing the valve to the vacuum pump, the photoiniferter was allowed to adsorb onto the silicon oxide substrates for > 48 h until atmospheric pressure was reached. Prior to UV-induced polymerization reactions, the photoiniferter-modified substrates were ultrasonicated in toluene for 2 min to remove physisorbed initiator before the initiator layer was characterized by variable angle spectroscopic ellipsometry and static contact-angle measurements. [Pg.187]

All single proteins were adsorbed from a 0.1 mg/ml solution in HEPES 2. Gradient and reference samples were exposed to the protein solution for 15 min, then subjected to rinsing with HEPES 2 and ultrapure water, and finally dried under a stream of nitrogen. Serum and plasma were used as received without further dilution. Variable angle spectroscopic ellipsometry measurements were carried out in a dry state. [Pg.498]

E. Variable angle spectroscopic ellipsometry (VASE) q. Molecular assembly patterning by lift-off (MAPL)... [Pg.498]

The structural regularity of the resulting NTCDI-based ultra-thin films was tested by variable angle spectroscopic ellipsometry (VASE, Woollam Co.) at 75°. Figure 6... [Pg.408]

Scheme 9.1 Methods in morphology characterization. TEM transmission electron microscopy EF-TEM energy filter transmission electron microscopy STXM scan transmission X-ray microscopy GISAXS grazing incidence small-angle X-ray scattering SANS small-angle neutron scattering RSoXS resonant soft X-ray scattering SEM scanning electron microscopy DSIMS dynamic secondary ion mass spectroscopy XR X-ray reflectivity NR neutron reflectivity VASE variable angle spectroscopic ellipsometry. Scheme 9.1 Methods in morphology characterization. TEM transmission electron microscopy EF-TEM energy filter transmission electron microscopy STXM scan transmission X-ray microscopy GISAXS grazing incidence small-angle X-ray scattering SANS small-angle neutron scattering RSoXS resonant soft X-ray scattering SEM scanning electron microscopy DSIMS dynamic secondary ion mass spectroscopy XR X-ray reflectivity NR neutron reflectivity VASE variable angle spectroscopic ellipsometry.
Other methods, such as variable-angle spectroscopic ellipsometry (VASE), can be used to obtain a depth profile of the BHJ active layers in thin-films. However, the proper modeling of the refractive indices of BHJ components and fitting is challenging, and one must contend with the fact that most polymers are highly absorbing for wavelengths in the visible spectrum." ... [Pg.293]


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Angle variables

Ellipsometry

Spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry VASE)

Variable-angle spectroscopic

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