Vapor thin films from

Thin Films from Vapor-phase Deposition Techniques 1008... 

J. Hu and R.G. Gordon, Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium, J. Appl. Phys., 72 5381-5392, 1992. 

Koh J, Ferlauto AS, Rovira PI, Wronski CR, Collins RW (1999) Evolutionary phase diagram for plasma enhanced chemical vapor deposition of silicon thin films from hydrogen diluted silane. Appl Phys Lett 75 2286-2289... 

Single-crystal OFETs provide a unique tool for the express analysis of transport characteristics of new molecular materials with defect densities much smaller than those in TFTs. Therefore, even though large-scale applications will ultimately rely on thin films, research on single-crystal OFETs can play an important role in the material selection for applied devices. The case of rubrene perfectly illustrates this point. The unprecedented quality of OFETs based on vapor-grown rubrene crystals has stimulated work on the deposition of rubrene thin-films from solution Stingelin-Stutzmann et al. have recently demonstrated solution-processed rubrene TFTs with high mobility (up to 0.7 cmWs at room temperature) [111]. 

Blackman, C. S. and Parkin, 1. P. (2005) Atmospheric Pressure Chemical Vapor Deposition of Crystalline Monoclinic W03 and W03-x Thin Films from Reaction of WC16 with O-Containing Solvents and Their Photochromic and Electrochromic Properties. Chemistry of Materials 17,1583-90. 

Chemical Vapor Deposition or CVD - It is a process for depositing thin films from a chemical reaction of a vapor or gas. 

Upon exposure to F vapor, thin films (7-12 tm thick) of HT PATs exhibit maximum electrical conductivities of 1000 S/cm for PDDT, 200 S/cm for POT, and 150 S/ cm for PHT (as measured in air) [74]. Thin films of PATs prepared from the FeCIi method show maximum conductivities between 20 and 0.1 S/cm. McCullough et al. have routinely measured conductivities of 100-200 S/cm in these samples in HT PDDT. In contrast, PDDT from FeCl3 gave conductivities of 0.1-1 S/cm (58-70% HT). Rieke and coworkers have reported that the electrical conductivity for their HT PATs is 1000 S/cm [91]. Rieke... 

An apparatus for the preparation of pure ozone vapor for use in situ growth of superconducting oxide thin films are designed [151]. Pure condensed ozone is produced from distillation of diluted ozone-oxygen mixture at 77K. The condensed ozone is heated until the pressure of its vapors approaches the necessary for an adequate flow of ozone- gas to the chamber of thin films growth. The thin films from YBa2Cu30, with zero resistance at temperatures of about 85K grow at ozone pressure in the... 

Blackman CS, Carmalt CJ, O Neill SA, Parkin IP, Apostolico L, Molloy KC (2004) Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine. Chem Mater 16 1120-1125... 

Lee D-J, Kang S-W, Rhee S-W (2002) Chtanical vapor deposition of ruthenium oxide thin films from Ru(tmhd)3 using direct liquid injection. Thin Solid Films 413(l-2) 237-242, http // dx.doi.org/10.1016/S0040-6090(02)00439-X... 

Fig. 10. Schematic of casting machine used to make microporous membranes by watervapor imbibition. A casting solution is deposited as a thin film on a moving stainless steel belt. The film passes through a series of humid and dry chambers, where the solvent evaporates from the solution, and water vapor is absorbed from the air. This precipitates the polymer, forming a microporous membrane that is taken up on a collection roU (25).

Similar to IFP s Dimersol process, the Alphabutol process uses a Ziegler-Natta type soluble catalyst based on a titanium complex, with triethyl aluminum as a co-catalyst. This soluble catalyst system avoids the isomerization of 1-butene to 2-butene and thus eliminates the need for removing the isomers from the 1-butene. The process is composed of four sections reaction, co-catalyst injection, catalyst removal, and distillation. Reaction takes place at 50—55°C and 2.4—2.8 MPa (350—400 psig) for 5—6 h. The catalyst is continuously fed to the reactor ethylene conversion is about 80—85% per pass with a selectivity to 1-butene of 93%. The catalyst is removed by vaporizing Hquid withdrawn from the reactor in two steps classical exchanger and thin-film evaporator. The purity of the butene produced with this technology is 99.90%. IFP has Hcensed this technology in areas where there is no local supply of 1-butene from other sources, such as Saudi Arabia and the Far East. 

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