Vapor phase decomposition inductively coupled plasma mass spectrometry

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Krushevska, A., Tan, S., Passer, M., Liu, X.R. (2000) Advances in trace element analysis of silicon wafer surfaces by vapor phase decomposition (VPD) and inductively coupled plasma mass spectrometry (ICP-MS). Journal of Analytical Atomic Spectrometry, 15, 1211-1216. [Pg.928]

Frost, M.R., Harrington, W.L., Downey, D.F., Walther, S.R. (1996) Surface metal contamination during ion implantation comparison of measurements by secondary ion mass spectroscopy, total reflection x-ray fluorescence spectrometry, and vapor phase decomposition used in conjunction with graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry. Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures, 14, 329— 335. [Pg.929]

Fucsko,J.,Tan, S. S-, and Balazs, M. K. (1993). Measurement of trace metallic contaminents on silicon wafer surfaces in native and dielectric silicon oxides by vapor-phase decomposition flow injection inductively coupled plasma-mass spectrometry. J. Electrochem. Soc. 140(4), 1105. [Pg.213]