V-defects

Fig.l shows the outline of the experimential device in the pseudo-bonding The specimen of an upper part and a lower part are made with the lathe And V defect (pitch 0 25mm and 0.1 mm in depth) with the lathe shown in Fig.2 was installed on the bonding surface of a lower specimen. The initialized various contact surface are ground... 

F — B ) is the ratio of the reflective echo height F from the contact surface to the standard reflective echo height B on the bottom of the upper specimen. Hereafter, F/B is called the echo height. Moreover, the contact surface of this lower specimen have no V defect. In the frequency, O is... 

A7.4 Defects in GaN and related materials open core dislocations and V-defects... 

FIGURE 2 (a) Schematic illustration of a hexahedron shaped pit in GaN with a threading dislocation at the apex, The vicinal sides of the pit are 1011 surfaces, (b) TEM micrograph of a pit in a ten layer Ino.30Gao.70N/GaN MQW structure. The GaN barrier, b, is thinner inside the V-defect, where growth occurs on the 1011 surfaces, than outside the V-defect, where growth occurs on the (0001) surface (L.T. Romano, MQW film courtesy of Hewlett Packard Optoelectronics Division). 

FIGURE 2 Bright-field transmission electron micrograph of a GalnN/GaN multiple quantum well structure exhibiting V-defects [12],... 

Disorder within the structure of (VO)2P207 has been identified with catalytic activity. The number of V + defects in (V0)2P207, as measured by magnetic susceptibility, correlates with the rate of n-butane oxidation. The structural disorder... 

Cation vacancies ( 3.5). These are often classified as Vj centers, where the subscript s has again the meaning of distinguish between bulk or surface vacancies. Cation vacancies in MgO correspond to the removal of Mg, Mg, or Mg species and results in V, V and V defects. The V and V centers are paramagnetic. 

GIcNAc-TI important GO signal Mana1 v (defective In Led CHO cells)... 

FIGURE 1.22 Typical conformations (I, random coil II, molten globule III, toroid IV, rod V, defect coil VI, defect cylinder) of a 100-segment homopolymer generated by Monte Carlo simulations. (Source Ref. [32].)... 

Figure 5.23 Luminescence spectrum of an N-V-defect in the diamond iattice at room temperature ( F. Jeiezko).

Figure 5.46 (a) N-V-defect induced fluorescence of nanodiamond inside living cells (bright spots) (b) corresponding fluorescence spectrum of the diamond nanoparticles under test ( ACS 2005). 

TappiaP.S., BibeauM., SahiN., Pierce G.N., Dixon Panagia V. Defective sarcolemmal... 

Precise characterization and understanding of quantum properties of single colour centers in diamond is still under progress. A great variety of the colour centers and the complex environment conditions together with the strict limitations posed on the candidates for QIT applications makes the characterization an important and hard problem. The mostly investigated potential candidate is the nitrogen vacancy [N-V]" defect centre in diamond [8]. 

All XPS results in the literature suggest that the VPP surface is enriched in phosphorus. In a paper devoted to XPS, Coulston et al presented a calibration method to determine the P/V ratio, and showed that during the reaction 8, y and / -V0P04 transformed to VPP (or more exactly to the presence of pyrophosphate groups). Interpretations differ about the way P + species are displayed on the sinface, but such excess phosphorus could stabilize (O-V)defect species. The question remains regarding the actual oxidation state of vanadium. 

The longer wavelength PL emission from the planar a-plane sample agreed with the higher In content, determined from the HRXRD analysis. The results showed that the In incorporation and hence the PL emission wavelength was considerably higher in defective material. The presence of surface defects with facets other than the (1120) orientation led to the increased In incorporation in the defective areas. Similar behavior was observed in the presence of the so-called V-defects in c-plane InGaN/GaN MQWs by Wu et al. [13]. However, the reasons for lower In incorporation efficiency in a-plane GaN compared with c-plane GaN are unclear. 

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