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UV radiation resistance

Details are given of the copolymerisation of maleimide derived UV stabilisers with aaylonitrile and styrene in the presence of NBR or SBR latexes. Thermomechanical properties and UV radiation resistance are discussed. 26 refs. USA... [Pg.92]

Accelerated UV weathering of CNT-epoxy nanocomposites was investigated and most reports did concur in their assessment that it is unlikely for CNTs to be readily released into the environment given their aggregation in high density networks [249, 252, 254—257]. Moreover, an addition of 0.72 or 0.75 wt% [249, 252] of MWCNTs to an amine-cured epoxy-based nanocomposite yielded in an UV radiation resistant material with a surface containing a dense network of nanoparticles that remained unaffected for long terms, without MWCNTs release. [Pg.145]

The layer width is taken from the relation d > 1,5 dg, where dg - thickness of a gas discharge gap. The employment of a resistive layer instead of electrode profiling can significantly simplify the device manufacture. The UV radiation is efficiently converted into a visible one by a number of photo-luminophors, e.g. Zn2Si04 Mn. For stroboscopic registration of fast-proceeding processes the luminophors with short period of luminescence are used, e.g anthracene etc. [Pg.540]

Other Properties. Polyester fibers have good resistance to uv radiation although prolonged exposure weakens the fibers (47,51). PET is not affected by iasects or microorganisms and can be designed to kill bacteria by the iacorporation of antimicrobial agents (19). The oleophilic surface of PET fibers attracts and holds oils. Other PET fiber properties can be found ia the Hterature (47,49). [Pg.327]

Scratch resistance of polymer from DADC is improved by novel mixtures of peroxide initiators such as 5% isopropyl percarbonate with 3.5% benzoyl peroxide (16). In order to force completion of polymerization and attain the best scratch resistance in lenses, uv radiation is appHed (17). Eyeglass lenses can be made by prepolymerization in molds followed by removal for final thermal cross-linking (18). [Pg.82]

Surface modification of a contact lens can be grouped into physical and chemical types of treatment. Physical treatments include plasma treatments with water vapor (siUcone lens) and oxygen (176) and plasma polymerization for which the material surface is exposed to the plasma in the presence of a reactive monomer (177). Surfaces are also altered with exposure to uv radiation (178) or bombardment with oxides of nitrogen (179). Ion implantation (qv) of RGP plastics (180) can greatiy increase the surface hardness and hence the scratch resistance without seriously affecting the transmission of light. [Pg.107]

Fig. 3. Lithographic process using positive- and negative-resist systems. The element (a) is (b), exposed to uv radiation (c), developed and (d), the metal is... Fig. 3. Lithographic process using positive- and negative-resist systems. The element (a) is (b), exposed to uv radiation (c), developed and (d), the metal is...
Ethylene-vinyl acetate EVAs (in the polyolefin family) have exceptional barrier properties, good clarity and gloss, stress-crack resistance, low temperature toughness/retains flexibility, adhesion, resistance to UV radiation, etc. They have low resistance to heat and solvents. [Pg.427]

In recent years, many poly(phosphazenes), [RoPN]n, with a variety of substituents at phosphorus have been prepared and they often exhibit useful properties including low temperature flexibility, resistance to chemical attack, flame retardancy, stability to UV radiation, and reasonably high thermal stability. (1,2) Compounds containing biologically, catalytically, or electrically active side groups are also being investigated. (3,4)... [Pg.283]

Environmental factors such as temperature (increases), humidity (violent change), pH and exposure to UV radiation can also influence the stability of the proteins, causing changes in their structure and lowering the resistance to biodeterioration. This decay is also influenced by the presence of other components such as lipids, carbohydrates, mineral... [Pg.240]

Another problem is degradation of the sensor due to the high UV dose. The radiation resistance of most photodiodes decreases with wavelengths. UV-enhanced Si photodiodes show a loss of 10% in sensitivity already after an accumulated dose of some hundred J/cm2 at X = 254 nm. This is the dose a sensor will have received over the lifetime of an Hg lamp. Special silicon nitride-protected photodiodes are stable up to 105 J/cm2. A filter combined with an attenuator may help to achieve the required selectivity and reduce the exposure of the detector. However, the radiation stability of the filter has to be guaranteed. [Pg.174]

A 0.3 fin thick SPP layer was exposed to a 20 kV electron beam followed by a flood exposure using near UV radiation with an integrated dose of over 500 mJ/cm2. Such a dose was sufficient to convert the remaining DNQ to indenecarboxylic acid. The resist was then dip-developed In an aqueous TMAH solution for 60 s at 25°C. [Pg.177]

A 0.4 m thick SPP layer was exposed to X-rays followed by a flood exposure using near UV radiation. The resist was then dip-developed in a 0.8 wt% TMAH solution for 60 s at 25 °C. We used two x-ray exposure systems to evaluate the characteristics of the SPP resist. One is SR-114 which has a source composed of a molybdenum rotating anode with a 0.54 nm Mo-La characteristic line. The exposure was carried out in air. The other has a synchrotron radiation source with a central wavelength of 0.7 nm (KEK Photon Factory Beam Line, BL-1B). The exposure was carried out in vacuum (<10-4 Pa). A positive resist, FBM-G,15) was used as a standard, because its sensitivity only weakly depends on the ambient. [Pg.179]

Figure 3. Sensitivity curves of SPP image reversal (solid line) after 20kV EB exposure compared with a novolac-based resist (dashed line). A 0.3 //m thick resist layer was exposed to EB followed by a flood exposure using near UV radiation and then dip-developed in an aqueous THAH solution for 60 s at 25°C. TMAH concentration A 0.65 wt%, B 0.70 wt%, C 0.80 wt%, D 1.2 wt%. Figure 3. Sensitivity curves of SPP image reversal (solid line) after 20kV EB exposure compared with a novolac-based resist (dashed line). A 0.3 //m thick resist layer was exposed to EB followed by a flood exposure using near UV radiation and then dip-developed in an aqueous THAH solution for 60 s at 25°C. TMAH concentration A 0.65 wt%, B 0.70 wt%, C 0.80 wt%, D 1.2 wt%.

See other pages where UV radiation resistance is mentioned: [Pg.185]    [Pg.168]    [Pg.225]    [Pg.1517]    [Pg.209]    [Pg.91]    [Pg.186]    [Pg.195]    [Pg.1299]    [Pg.2]    [Pg.185]    [Pg.168]    [Pg.225]    [Pg.1517]    [Pg.209]    [Pg.91]    [Pg.186]    [Pg.195]    [Pg.1299]    [Pg.2]    [Pg.538]    [Pg.172]    [Pg.371]    [Pg.279]    [Pg.539]    [Pg.10]    [Pg.328]    [Pg.513]    [Pg.453]    [Pg.331]    [Pg.271]    [Pg.212]    [Pg.865]    [Pg.870]    [Pg.776]    [Pg.201]    [Pg.212]    [Pg.215]    [Pg.591]    [Pg.219]    [Pg.90]    [Pg.304]    [Pg.162]    [Pg.3]    [Pg.22]   
See also in sourсe #XX -- [ Pg.8 ]




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