ULSI, VLSI

J. Wary, R. A. Olson, and W. F. Beach, 2nd International Dielectricsfor VLSI/ ULSI Multilevel Insulation Conference (DUMIC), Santa Clara, Cal., Feb. 

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

Item Detectic Limit w 88 00 VLSI ULSI Target... 

Item Detection Limit 1985 Specs Attainable 1985 Specs Acceptable 1988 Specs Attainable 1988 Specs Acceptable [Pg.523]

Note These specifications were developed at Balazs Analytical Laboratory. Abbreviations are defined as follows DRAM, dynamic random access memory VLSI, very-large-scale integration ULSI, ultralarge-scale integration TOC, total oxidizable carbon THM, trihalomethane SEM, scanning electron microscopy and EPI, epifluorescence... 

Chang L, Goodner R (1991) SPIE, Metallization Performance and Reliabilty Issues for VLSI and ULSI 1596 34... 

Muraka SP. Metallization Theory and Practice for VLSI and ULSI. Massachusetts (MA) Butterworth-Heinemann 1993. 

Schmitz JEJ. Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ULSI Applications. Noyes Publications 1992. p 15. 

Bartosh K, Peters D, Hughes M, Li Y, Cheemalapati K, Chowdhury R. Organic residue removal through novel surface preparation chemistries and processes for CMP and post CMP applications. Proceedings of 10th International VLSI/ULSI Multilevel Interconnection Conference 2003. p 533-539. 

Y. Hazuki,H. Yano, K. Horioka,N. HayasakaandH. Okano,mTungstenandOtherAdvanced Metals for VLSI/ULSI Applications V (Eds S. S. Wong and S. Furukawa), Materials Research Society, Pittsburgh, PA, 1990, pp. 351-357. 

Tungsten Workshop VI = Proceedings of the Workshop on "Tungsten and Other Advanced Metals for VLSI/ULSI Applications 1990", G.C. Smith and R. Blumenthal ed., Materials Research Society, Pittsburgh PA. 

The alloy W-lOTi is used as a sputtering target in the manufacture of microelectronics devices, such as VLSI, ULSI (very large resp. ultralarge-scale integration), and DRAM (dynamic random access memory) chips. Thin W-Ti layers are sputtered onto silicon substrates and act as a diffusion barrier against aluminum (intercormect). 

Heat sinks (W-Cu) [7.14], Downscaling and higher integration of electronic devices (LSI via VLSI to ULSI) generates very high and localized heat release. An effective and fast heat transfer to heat sinks of W-Cu composite materials of different W/Cu ratios is necessary. The following properties are of importance ... 

H. Hirabayashi, M. Higuchi, M. Kinoshita, H. Kaneko, N. Hayasaka, K. Mase, and J. Oshima, Proc. First Int. CMP for VLSI/ULSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, February 1996, p. 22. 

Kaanta, C.W., et al., 1991. Dual Damascene a ULSI wiring technology. Santa Clara, CA, USA. In Proceedings of Eighth International IEEE VLSI Multilevel Interconnection Conference, pp. 144—152. 

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