Trimethylamine-sulfur dioxide

Trimetaphosphimic acid, 6 79 Trimethylamine, coordination compounds with boron fluoride and chloride, 5 26, 27 purification of, 2 159 Trimethylamine-sulfur dioxide, 2 159... 

Trimethylamine-Sulfur dioxide, (CH3>3N—S02. Trimethylamine and sulfur dioxide form a stable complex melting at 77 . ... 

NITRILES Chlorosulfonylisocyanate. Dimethylaluminum amide. Hydroxyl-amine. Hydroxylamine-O-sulfonic acid. Selenium dioxide. Triethoxydiiodophos-phorane. Trifluoroacetic anhydride-Pyridine. Trimethylamine-Sulfur dioxide. 

Trimethylamine-sulfur dioxide is a white crystalline solid m.p. 76° (sealed tube). It decomposes if heated much above its melting point but is readily sublimed in vacuo below its melting point (slow sublimation produces large transparent crystals). It is practically insoluble in dioxane, carbon tetrachloride, petroleum ether, and cyclohexane slightly soluble in chloroform moderately soluble in bromo-form, benzene, and ethylene dichloride and very soluble in alcohol and water. 

SFe Sulfur(VI) fluoride, 1 121 SH2 Hydrc en sulfide, 1 111 SOBr2 Thionyl bromide, 1 113 SO2 Sulfur dioxide, 2 160 SO2CI2 S dfuryl chloride, 1 114 S02 N(CH3)3 Trimethylamine-sulfur dioxide, 2 159 SOs CsHsN Pyridine-sulfur trioxide, 2 173... 

Olah, G.A. and YD. Vankar. 1978. Synthetic methods and reactions. 52. Preparation of nitriles from aldoximes via dehydration with trimethylamine/sulfur dioxide complex. Synthesis 9 702-703. 

The depletion width can play a role in analyte-induced modulation of the semiconductor PL [4]. As molecules adsorb onto the surface of the semiconductor, the dead-layer thickness can change, resulting in what can be described as a luminescent litmus test When Lewis bases adsorb onto the semiconductor surface, they donate electron density to the solid, which decreases the electric field and thus decreases the dead-layer thickness. The reduction in D causes an enhancement in the PL intensity from the semiconductor. Figures 2a and 2b present typical PL enhancements observed from an etched n-CdSe substrate Relative to a nitrogen reference ambient, adsorption of the Lewis bases ammonia and trimethylamine cause a reversible increase in PL intensity. In contrast, when Lewis acids adsorb onto the surface, they can withdraw additional electron density, causing the electric field to increase and the PL intensity to decrease. Such effects have been observed with gases like sulfur dioxide [5]. 

Photoluminescence experiments with ni-V wafers of Ino.5o(Gao.9o A1o.io)o.5oP were conducted 114]. The Lewis basic gaseous analytes ammonia, methylamine, dimethyl amine, and trimethylamine all yielded reversible PL enhancements. The Lewis acid sulfur dioxide, in contrast, caused reversible quenching of the semiconductor s PL intensity. These PL intensity changes were consistent with analyte-induced modifications of the dead-layer thickness. 

These devices showed EL enhancements to ammonia, methylamine, di-methylamine, trimethylamine, and sulfur dioxide that increased in magnitude with concentration until saturation was reached [14]. The LEDs with larger active layers produced the greatest change in EL intensity with exposure to sulfur dioxide and the amines. Intensity changes were attributed principally to surface recombination velocity effects, as the significant forward biases employed should eliminate the depletion width. 

Properties White powder. Mp 23 2-23 8C (decomposes). Soluble in hot water, ethanol soluble with difficulty in cold water and acetone not dissociated in benzene and chloroform solutions distinctly different from the isomeric adduct of trimethylamine oxide and sulfur dioxide. 

CH3COCH3 acetonitrile, CH3C = N formamide, HCONH2 sulfur dioxide, SO2 ammonia, NH3 trimethylamine, N(CH3)3 ethylene glycol, HOCH2CH2OH. 

Cationic and anionic ion exchange resins Foil pulse pyrolysis 400-500 °C Sulfur dioxide, benzene at 500 °C also ethyl benzene, styrene, hydrogen sulfide, toluene at higher temperatures. Anionic resins trimethylamine methyl chloride at 400 °C, and styrene, p-methyl styrene, p-ethyl styrene at 400-900 C. - [86]... 

Several j3-sultones are claimed to be formed by treatment of alkenes with sulfuric acid or by heating alkenesulfonic acids. Treatment of 2,2-dimethyl-1,1-diphenyl-1-propanol with concentrated sulfuric acid at room temperature is said to give 3-(l,l-diphenylethyl)-3-methyl-l,2-oxathietane 2,2-dioxide (96% yield). Treatment of sodium 3-bromo-2-hydroxybutanesulfonate with phosphorus trichloride is reported to give a low yield of 4-(l-bromoethyl)-l,2-oxathietane 2,2-dioxide.1,2-Oxathietane 2,2-dioxide is suggested as an intermediate in the reaction of /3-hydroxyethanesulfonyl chloride with trimethylamine to give the zwitterion 502. The first four-membered monocycUc sulfurane oxides 502a have been reported. 

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