Hydrogen anneal phenomena

Possible sites for the hydrogen anneal phenomena might be surface states, for example, on either side of the native oxide on top of the SiC surface. However, lattice defects and contamination in the surface layer of the epilayer may also be involved, as indicated in the 1/C curves. These may be on different sides of the thin insulator between the metal and the SiC. The thin insulator in these samples is probably a thin native oxide, SiO and oxidized Ta, Ta O, from the TaSi layer. 

The difference observed between annealing at 4 hours or 10 minutes for the n-doped material indicates the existence of a hydrogen-induced phenomenon with a high activation energy, whereas the difference for p-type material indicates a phenomenon with lower activation energy. 

In this study, the electrochromic property of the Ti02 thin film has been studied in the lithium (Lf) or hydrogen (H" ) electrolyte solutions, and the Ti02 thin film has been annealed at the various temperatures to optimize the electrochromic property of the Ti02 thin film. The different transmittances (T%) of the Ti02 thin film can be obtained when the Ti02 thin film is immersed in different concentrations of electrolyte solutions, and the phenomenon can be applied to detect the pH value of solution. 

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