Temperature dependence Hall effect

Temperature dependent Hall effect measurements have also been carried out in the temperature range 30 to 260 K on a K3C60 thin film [116]. For three... 

Wang, Z., Brawner, D., Chien, T., Ong, N., Tarascon, J., and Wang, E., Temperature Dependent Hall Effect in Nd2 xCex-Cu04 and "60 K" YBa2Cu3Oy Single Crystals, International M2S-HTSC Conference, Stanford, CA, 3-28 July 1989, to be published Physica C. 

Temperature-Dependent Hall-Effect Parameters in Semi-Insulating GaAs ... 

Table 7.5. Energetic positions below the conduction band edge (Ec) and densities of shallow (Hi, Alzn) and deep (I ll -E5) donor-like defect levels (traps) in ZnO identified by temperature-dependent Hall effect and deep level transient spectroscopy, respectively, in undoped PLD films and single crystals grown by seeded chemical vapor deposition (Eagle Picher), taken from H. von Wenckstern [57]...

Abstract Temperature-dependent Hall-effect measurements have been used to... 

Electrical measurements, mainly temperature-dependent Hall-effect measurements, have been critical in the elucidation of donors and acceptors in ZnO. The main background donors in state-of-the-art VP-grown ZnO have been shown to be H and Al, and the acceptor, Vzn. Other possible donors that must be investigated further are the defects Vo and Znj. Although Vzn seems to be the main electrically active acceptor, still N is evidently present at a much higher concentration. If this is true, then N must be passivated, and the likely passivator is H. Indeed, annealing experiments lead to a much higher acceptor concentration, presumable due to the... 

The temperature dependent Hall effect [351] and the conductivity at high pressure [352] were also measured. Moreover, the high conductivity made it possible to measure the conductivity of the monolayer at the air-water interface [353,354]. A typical a-A isotherm is... 

Hall effect measurements were used to investigate the electrical properties of the poly-Si films formed by the ALILE process. Due to the incorporated Al, the poly-Si films are always p-type. At room temperature, a hole concentration of 2.6 x 1018 run 3 and a hole mobility of 56.3 cm2 V 1 s 1 were determined [16]. Temperature dependent Hall measurements revealed both valence band conduction and defect band conduction (two-band conduction). For such highly doped material, the presence of a defect band conduction is expected. The Al concentration in the poly-Si films was measured by secondary ion mass spectroscopy (SIMS). An Al concentration of about 3 x 1019 cm 3 was found, which is about a factor of 10 larger than the... 

Song et al. [16] reported results relative to a four-point resistivity measurement on a large bundle of carbon nanotubes (60 um diameter and 350 tm in length between the two potential contacts). They explained their resistivity, magnetoresistance, and Hall effect results in terms of a conductor that could be modeled as a semimetal. Figures 4 (a) and (b) show the magnetic field dependence they observed on the high- and low-temperature MR, respectively. 

Fig. 5. Energy above the valence band of levels reported in the literature for GaP. Arrangement and notations are the same as in Fig. 4. Abbreviations for experimental methods not defined in Fig. 4. are temperature dependence of resistivity (RT), temperature dependence of minority-carrier lifetime (LT), Hall effect (H), and photostimulated electron paramagnetic resonance (PEPR).

Finally, the reliability of the various activation energy measurements should be judged. The TDH measurement is unambiguous as long as the Hall factor [Eq. (A17)] is either close to unity or else is not very temperature dependent (or both), and if mixed conductivity effects are either small or can be taken into account. Usually, neither of these problems is very important as far as a major change in the slope of the Arrhenius plot is concerned. The emission experiments, on the other hand, lead to an apparent activation energy of Ei0 + Eai, where Eai is given by the relationship [Pg.122]

These results indicate that surface effects were not affecting his results to any extent at temperatures below room temperature. If surface traps had been involved, they would have affected the conductivity of sintered samples to a larger extent than the Hall coefficient. However, the temperature dependence of the Hall coefficient corresponds closely to that of the conductivity. 

Fig. 37. Band edge profile of a (In,Mn)As/GaSb heterostmcture. Eq. E. and Ep denote band edges of conduction band, valence band, and Fermi level, respectively, (b) Temperature dependence of the magnetization observed during cooldown in the dark (open circles) and warmup (solid circles) under a fixed magnetic field of 0.02 T. The effect of light irradiation at 5 K is also shown by an arrow, (c) Magnetization curves at 5 K observed before (open circles) and after (solid circles) light irradiation. Solid line shows a theoretical curve, (d) Hall resistivity />Hall observed at 5 K before (dashed line) and after (solid line) light irradiation (Koshihara...

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