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Tantalum formation

Another method of purifying niobium is by distillation of the anhydrous mixed chlorides (29). Niobium and tantalum pentachlorides boil within about 15°C of one another which makes control of the process difficult. Additionally, process materials must withstand the corrosion effects of the chloride. The system must be kept meticulously anhydrous and air-free to avoid plugging resulting from the formation of niobium oxide trichloride, NbOQ. Distillation has been used commercially in the past. [Pg.23]

Tantalum Compounds. Potassium heptafluorotantalate [16924-00-8] K TaF, is the most important tantalum compound produced at plant scale. This compound is used in large quantities for tantalum metal production. The fluorotantalate is prepared by adding potassium salts such as KCl and KF to the hot aqueous tantalum solution produced by the solvent extraction process. The mixture is then allowed to cool under strictiy controlled conditions to get a crystalline mass having a reproducible particle size distribution. To prevent the formation of oxyfluorides, it is necessary to start with reaction mixtures having an excess of about 5% HF on a wt/wt basis. The acid is added directiy to the reaction mixture or together with the aqueous solution of the potassium compound. Potassium heptafluorotantalate is produced either in a batch process where the quantity of output is about 300—500 kg K TaFy, or by a continuously operated process (28). [Pg.327]

Flaws in the anodic oxide film are usually the primary source of electronic conduction. These flaws are either stmctural or chemical in nature. The stmctural flaws include thermal crystalline oxide, nitrides, carbides, inclusion of foreign phases, and oxide recrystaUi2ed by an appHed electric field. The roughness of the tantalum surface affects the electronic conduction and should be classified as a stmctural flaw (58) the correlation between electronic conduction and roughness, however, was not observed (59). Chemical impurities arise from metals alloyed with the tantalum, inclusions in the oxide of material from the formation electrolyte, and impurities on the surface of the tantalum substrate that are incorporated in the oxide during formation. [Pg.331]

The important (3-stabilizing alloying elements are the bcc elements vanadium, molybdenum, tantalum, and niobium of the P-isomorphous type and manganese, iron, chromium, cobalt, nickel, copper, and siUcon of the P-eutectoid type. The P eutectoid elements, arranged in order of increasing tendency to form compounds, are shown in Table 7. The elements copper, siUcon, nickel, and cobalt are termed active eutectoid formers because of a rapid decomposition of P to a and a compound. The other elements in Table 7 are sluggish in their eutectoid reactions and thus it is possible to avoid compound formation by careful control of heat treatment and composition. The relative P-stabilizing effects of these elements can be expressed in the form of a molybdenum equivalency. Mo (29) ... [Pg.101]

Bromine reacts with essentially all metals, except tantalum and niobium, although elevated temperatures are sometimes required, eg, soHd sodium does not react with dry bromine but sodium vapor reacts vigorously. Metals such as lead, magnesium, nickel, and silver react with bromine to form a surface coat of bromide that resists further attack. This protective coating allows lead and nickel to be used as linings in bromine containers. Metals tend to be corroded by bromine faster in the presence of moisture than without, probably because of the formation of hydrobromic and hypobromous acids. [Pg.280]

In many applications tantalum can be substituted for platinum and gold, and there are some environments in which tantalum is more corrosion resistant than platinum. Table 3.37 lists the main chemicals for which tantalum is not a suitable substitute for platinum and, conversely, those for wliich tantalum is better than platinum. Tantalum is rapidly embrittled by nascent hydrogen even at room temperature. Therefore, it is very important to avoid the formation of galvanic couples between tantalum and other metals. [Pg.97]

The elements of Group 5 are in many ways similar to their predecessors in Group 4. They react with most non-metals, giving products which are frequently interstitial and nonstoichiometric, but they require high temperatures to do so. Their general resistance to corrosion is largely due to the formation of surface films of oxides which are particularly effective in the case of tantalum. Unless heated, tantalum is appreciably attacked only by oleum, hydrofluoric acid or, more particularly, a hydrofluoric/nitric acid mixture. Fused alkalis will also attack it. In addition to these reagents, vanadium and niobium are attacked by other hot concentrated mineral acids but are resistant to fused alkali. [Pg.979]

This example of aluminium illustrates the importance of the protective him, and hlms that are hard, dense and adherent will provide better protection than those that are loosely adherent or that are brittle and therefore crack and spall when the metal is subjected to stress. The ability of the metal to reform a protective him is highly important and metals like titanium and tantalum that are readily passivated are more resistant to erosion-corrosion than copper, brass, lead and some of the stainless steels. There is some evidence that the hardness of a metal is a signihcant factor in resistance to erosion-corrosion, but since alloying to increase hardness will also affect the chemical properties of the alloy it is difficult to separate these two factors. Thus althou copper is highly susceptible to impingement attack its resistance increases with increase in zinc content, with a corresponding increase in hardness. However, the increase in resistance to attack is due to the formation of a more protective him rather than to an increase in hardness. [Pg.192]

Anodic oxide formation Lakhiani and Shreir have studied the anodic oxidation of niobium in various electrolytes, and have observed that temperature and current density have a marked effect on the anodising characteristics. The plateau on the voltage/time curve has been shown by electron microscopy to correspond with the crystallisation of the oxide and rupture of the previously formed oxide. It would appear that this is a further example of field recrystallisation —a phenomenon which has been observed previously during anodisation of tantalum" . No significant data on the galvanic behaviour of niobium are available however, its behaviour can be expected to be similar to tantalum. [Pg.858]

Tantalum is severely attacked at ambient temperatures and up to about 100°C in aqueous atmospheric environments in the presence of fluorine and hydrofluoric acids. Flourine, hydrofluoric acid and fluoride salt solutions represent typical aggressive environments in which tantalum corrodes at ambient temperatures. Under exposure to these environments the protective TajOj oxide film is attacked and the metal is transformed from a passive to an active state. The corrosion mechanism of tantalum in these environments is mainly based on dissolution reactions to give fluoro complexes. The composition depends markedly on the conditions. The existence of oxidizing agents such as sulphur trioxide or peroxides in aqueous fluoride environments enhance the corrosion rate of tantalum owing to rapid formation of oxofluoro complexes. [Pg.894]

Tantalum has a high solubility for hydrogen, forming two internal hydrides, but the exact mechanism of their formation is not precisely known. [Pg.894]

Sodium hydroxide (NaOH) and potassium hydroxide (KOH) solutions do not dissolve tantalum, but tend to destroy the metal by formation of successive layers of surface scale. The rate of the destruction increases with concentration and temperature. Damage to tantalum equipment has been experienced unexpectedly when strong alkaline solutions are used during cleaning and maintenance. [Pg.896]

An increase in the Me F ratio leads to an increase in the acidity of the initial solution, whereas the acidity of alkali metals increases according to their molecular weight, from Li to Cs. Therefore the additives of fluorides of alkali metals having higher atomic weight provide formation of complex fluorides with lower coordination number of tantalum or niobium. [Pg.17]

The stoichiometry of the prepared compounds depends not only on the composition of the initial mixture, but also on the initial oxide s fluorination activity. Unlike tantalum oxide, fluorination of niobium oxide by an ammonium hydrofluoride melt results in the formation of oxyfluoroniobates, but not of fluoroniobates. During the first step of Nb205 fluorination, (NH4)3NbOF6 is formed according to the following interaction [51, 52, 105, 111, 121, 122] ... [Pg.49]

The steric similarity of oxygen and fluorine ions enables the formation of coordination-type structures in some tantalum and niobium oxyfluoride compounds. [Pg.109]

The first comprehensive investigation of the TaF5 - HF - H2O system was performed by Buslaev and Nikolaev [292]. Based on the analysis of solubility isotherms, and on conductometric and potentiometric titrations, the authors concluded that in this solution, tantalum forms oxyfluorotantalic acid, H2TaOF5, similar to the formation of H NbOFs in solutions containing NbF5. [Pg.130]

IR absorption spectrum of the initial tantalum-saturated solution displays a weak band at about 880 cm 1, which corresponds to TaO bonds. The formation of the oxyfluorotantalate complex seems to be similar to the formation of oxyfluoroniobate in a niobium-saturated solution, but in the case of tantalum, the above effect is more emphasized. [Pg.133]

In summary, it can be said that tantalum-containing fluoride solutions generally consist of two types of ions TaF72 and TaF6. Low acidity of the solution (i.e. low HF concentration) leads to the predominant formation of TaF72 complex ions, while higher concentrations of HF lead to the presence of TaF6" complex ions. [Pg.134]

The proposed model of the structure of oxyfluoride melts corresponds with the conductivity results shown in Fig. 69. The specific conductivity of the melt drops abruptly and asymptotically approaches a constant value with the increase in tantalum oxide concentration. This can be regarded as an additional indication of the formation of oxyfluorotantale-associated polyanions, which leads to a decrease in the volume in which light ions, such as potassium and fluorine, can move. The formation of the polyanions can be presented as follows ... [Pg.167]

The formation of complexes in fluoride and oxyfluoride melts containing tantalum and niobium will be discussed later on in detail. [Pg.174]

Table 55 presents the results discussed above. Fluoride melts containing tantalum contain two types of complex ions, namely TaF6 and TaF72 . The equilibrium between the complexes depends on the concentration of fluoride ions in the system, but mostly upon the nature of the outer-sphere cations. The complex ionic structure of the melts can be adjusted by adding cations with a certain polarization potential. For instance, the presence of low polarization potential cations, such as cesium, leads primarily to the formation of TaF72 complexes, while the addition of cations with relatively high polarization potentials, such as lithium or sodium, shifts the equilibrium towards the formation of TaF6 ions. [Pg.180]

Thus, in cubic oxyfluorides of niobium and tantalum with rock-salt (NaCl) crystal structures, the formation and extinction of spontaneous polarization occurs due to polar ordering or disordering of Li+ - Nb5+(Ta5+) dipoles. [Pg.230]

It was proposed [445 - 447] that the dissolution of tantalum and niobium oxides in mixtures of hydrofluoric and sulfuric acids takes place through the formation of fluoride-sulfate complexes, at least during the initial steps of the interaction and at relatively low acid concentrations. Nevertheless, it was also assumed that both tantalum and niobium fluoride-sulfate complexes are prone to hydrolysis yielding pure fluoride complexes and sulfuric acid. No data was provided, however, to confirm the formation of fluoride sulfate complexes of tantalum and niobium in the solutions. [Pg.257]


See other pages where Tantalum formation is mentioned: [Pg.936]    [Pg.115]    [Pg.396]    [Pg.137]    [Pg.45]    [Pg.47]    [Pg.331]    [Pg.407]    [Pg.98]    [Pg.208]    [Pg.481]    [Pg.289]    [Pg.900]    [Pg.15]    [Pg.15]    [Pg.20]    [Pg.35]    [Pg.37]    [Pg.41]    [Pg.116]    [Pg.120]    [Pg.166]    [Pg.166]    [Pg.191]    [Pg.201]   
See also in sourсe #XX -- [ Pg.22 ]




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