Substrate temperature, effect

Etching Anisotropy Analysis in the Framework of Surface Kinetics of Plasma Etching. Based on relation (8-22), analyze the substrate temperature effect on etching anisotropy. Which step of the ion energy-driven etching is most affected by substrate temperature Compare effects of translational gas temperature and electron temperature on the plasma etching process. 

The effect of the substrate temperature can also be considered (Fig. 16c). As the substrate temperature iacreases, the triangular diamond domain region ia the C—H—O equiUbrium diagram shrinks to almost aline at the highest temperature. 

Luft and Tsuo have presented a qualitative summary of the effects of various plasma parameters on the properties of the deposited a-Si H [6]. These generalized trends are very useful in designing deposition systems. It should be borne in mind, however, that for each individual deposition system the optimum conditions for obtaining device quality material have to be determined by empirical fine tuning. The most important external controls that are available for tuning the deposition processs are the power (or power density), the total pressure, the gas flow(s), and the substrate temperature. In the following the effects of each parameter on material properties will be discussed. 

N.W. Schmidt, T.S. Totushek, W.A. Kimes, D.R. Callender, and J.R. Doyle, Effects of substrate temperature and near-substrate plasma density on the properties of d.c. magnetron sputtered aluminum-doped zinc oxide, J. Appl. Phys., 94 5514-5521 (2003). 

A. Salehi, The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties, Thin Solid Films, 324 214-218, 1998. 

The proper treatment of the electronic subtleties at the metal center is not the only challenge for computational modeling of homogeneous catalysis. So far in this chapter we have focused exclusively in the energy variation of the catalyst/substrate complex throughout the catalytic cycle. This would be an exact model of reality if reactions were carried out in gas phase and at 0 K. Since this is conspicously not the common case, there is a whole area of improvement consisting in introducing environment and temperature effects. 

Thinning of the anodic oxide coverage is found at sharp 90° edges of the substrate. This effect has been ascribed to oxide stress, because similar results are found for low-temperature thermal oxidation under conditions where viscous flow is not present. For oxide thicknesses in excess of about 100 nm, cracks develop in... 

Lewis et al. (entry 11 of Table 2) examined the temperature-dependence of isotope effects in the action of both the human enzyme and the soybean enzyme, by measuring the relative amounts of per-protio and per-deuterio-13-hydroperoxy-products by HLPC. The observed effects are, therefore, composed of primary, secondary, and perhaps remote isotope-effect contributions. Isotope effects on fecat/ M for both enzymes (determined by competition between labeled substrates) are increased by high total substrate concentration, an effect previously observed but stiU ill-understood. At 100 /rM substrate, the effects are roughly independent of temperature below about 15 °C, and are about 60 (H/D) for the human enzyme and 100 (H/D) for the soybean enzyme. Above 15 °C, the effects decline to about 50 for the human enzyme and about 60 for the soybean enzyme, perhaps because non-isotope-sensitive steps become more nearly rate-limiting (see Chart 4). 

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