Growth Stranski-Krastanov

In practice, uniform films are obtained for only a limited number of film-substrate material combinations (17). The more common experience is that the deposited material forms 3D clusters. The clusters may form directly on the bare substrate, in the Volmer-Weber growth mode, or on top of a very thin but uniform film of the deposit, the Stranski-Krastanov growth mode. We now discuss a method for determining the equilibrium configuration of the deposited material. 

NbOx Pt(lll) Stranski-Krastanov growth (distorted Nb06 octahedral) (2)... 

Stranski-Krastanov growth has been documented for copper on Au(lll) [101, 102], Pt(100) and Pt(lll) [103], for silver on Au(lll) [104, 105], for cadmium on Cu(lll) [106] and for lead on Ag(100) and Ag(lll) [107-109]. In all of these examples, an active metal is deposited onto a low-index plane of a more noble metal. Since the substrate does not undergo electrochemical transformations at the deposition potential, a reproducible surface can be presented to the solution. At the same time, the substrate metal must be carefully prepared and characterized so that the nucleation and growth mechanisms can be clearly identified, and information can be obtained by variation of the density of surface features, including steps, defects and dislocations. 

Weiss W, Ritter M. Metal oxide heteroepitaxy Stranski-Krastanov growth of iron oxides on Pt(lll). Phys Rev B. 1999 59 5201-13. 

Au(lll) substrate is modified at low A by a commensurate 2D Cuads overlayer (cf. Section 3.4). The deposition of 3D Cu bulk phase follows a Stranski-Krastanov growth mechanism, l.e., formation of 3D islands on top of an internally strained 2D Cuads overlayer [4.44, 4.80, 4.81]. 

Figure 6.13 Schematic representation of the growth modes in Me fHm formation on S in systems with strong Me-S interaction depending on die ciystaDographic Me-S misfit, /= (do,Me - do,s)/do S- (a) Frank-van der Merwe growth mode (f 0) (b) Stranski-Krastanov growth mode (f 0).

The results obtained in the system k x hkl)/Cv , where 2D Me UPD phenomena occur followed by a Stranski-Krastanov growth mechanism in the OPD range, show that electrochemical 3D Me phase formation processes can be used for structuring and modification of metal single crystal surfaces in the nanometer range. Local electrochemical processes are initiated by in situ local probe methods using appropriate polarization routines. 

Fig. 14 Frame-captured LEEM video images showing Stranski-Krastanov growth of Sio.sGeo.s. The elapsed time during growth is indicated under each frame. Approximate Si-Ge coverage for each frame 0 ML at Osec 1 ML at 40 sec 2 ML at 70 sec 3 ML at 100 sec 4 ML at 130 sec 5 ML at 160 sec 6 ML at 190 sec and 3D islands at 46min. Field of view is 8 pm. (From Ref l)...

Growth of Sio.gGco.i films on Si(l 0 0) was conducted using the Ge(SiH3)4 gaseous precursor. In situ real-time LEEM observations indicated that the Stranski-Krastanov growth mode was also in operation in this case. AFM and XTEM images of films... 

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