Stranski-Krastanov growth mode

In practice, uniform films are obtained for only a limited number of film-substrate material combinations (17). The more common experience is that the deposited material forms 3D clusters. The clusters may form directly on the bare substrate, in the Volmer-Weber growth mode, or on top of a very thin but uniform film of the deposit, the Stranski-Krastanov growth mode. We now discuss a method for determining the equilibrium configuration of the deposited material. 

Figure 6.13 Schematic representation of the growth modes in Me fHm formation on S in systems with strong Me-S interaction depending on die ciystaDographic Me-S misfit, /= (do,Me - do,s)/do S- (a) Frank-van der Merwe growth mode (f 0) (b) Stranski-Krastanov growth mode (f 0).

Growth of Sio.gGco.i films on Si(l 0 0) was conducted using the Ge(SiH3)4 gaseous precursor. In situ real-time LEEM observations indicated that the Stranski-Krastanov growth mode was also in operation in this case. AFM and XTEM images of films... 

Stranski-Krastanov growth mode 219 sub-micron channels 485 substituted oligothiophenes 474 substrates - passivation 442 substrates - Si02 substrate 429 surface... 

E. Gillet and B. Gruzza. Stranski-Krastanov Growth Mode of Au on Mo(llO) Surfaces Investigation by Auger Electron Spectroscopy. Surf. Sci. 97 553 (1980). 

Fig. 38. Analysis of a germanium deposit on Si(OOl), sample No. 3. Shown are the Ge2p data and the Si TLLdata (upper panel). In the lower panel a Stranski-Krastanov growth mode with a 1 ML (left) and a 2 ML (right) wetting layer was assumed. The solid line is the generated spectrum from the pure references, the dotted line represents the measured spectrum from sample No.tS [127]. Reprinted with permission from M. Schleberger et al., J. Vac. Sci. Techn. A15, 3032 (1997), 1997, The American Vacuum Society.

---