ST Microelectronics

S. Acerboni, ST Microelectronics, CFM-AGI Department, Agrate Brianza, Italy... 

G. Beretta, ST Microelectronics, DSG Epitaxy Catania Department, Catania, Italy... 

The target process is the ST Microelectronics 0.18 pm, 6-metal CMOS process. The tile size is selected so as to contain 10-15 standard cells with 15% empty space. In the targeted process, it is assumed that inter-chip contact has an area pitch of 5 pmx 5 pm and a height of around 10-20 pm. Currently we focus on stacking of 2 chips, which are face-to-face bonded. We assume the two chips in a stack have equal areas, although it s not necessary in the future. The equivalent height of inter-chip contact is around 10 pm (face-to-face bonding). 

A 32 bits ARM microcontroller (STM32F407, ST Microelectronics) was used as Demodulator and Network Hub. USB was the choice to communicate with the PC and 10.5 Mbit/s UART as Measuring Channels network. The traffic of information required was achieved as shown the Fig. 9. It was accomplished because the demodulation process performed in the Measuring Channel reduces 1000 times the volume of data. 

For example. Figure 1.24 presents an implementation of the ST 10 processor from ST Microelectronics. This processor contains an ALU internally and can be interfaced to a MAC (Multiply and Accumulate) is a DSP. The ALU and MAC each have a set of specific instructions for mathematical operations. The MAC optimizes computations of the product, accumulation and operations of digital filtering type. 

The passivation of III -V compounds remains a challenging problem for microelectronics but has still received no answer as efficient as the H-termination of Si. The increase of the photoluminescence intensity and lifetime after treatments in sulfide solutions have recently attracted much attention [67]. Dagata et al. [160] have compared, by STM/STS in the ambient atmosphere, the passivation of GaAs in (NH4)2S... 

I. L. Grigorishin, N. I. Mukhurov, and I. F. Kotova, in Technical Digest of the 9th International Vacuum Microelectronics Conference, 7-12 July 1996, St. Petersburg, Russia (1996) 589. 

J. Houskova, K.N. Ho, M.K. Balazs, "Characterization of Components in Plasma Phosphorus Doped Oxides", ACS Symposium on Materials Characterization in Microelectronics Processing (ACS National Meeting), St. Louis, 1984. 

E.M. Ruggiero, Proc. 14th Ann. Microelectronics Symp., St. Louis Section, IEEE, May 24-26,1965, IEEE New York, 6B-1. 

Yuri M. Tairov, Ph.D. Department of Microelectronics, St. Petersburg Electrotechnical University, St. Petersburg, Russia... 

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