Deposition sputter

Since the report of RF-sputtered tellurium oxide films in 1992 [78], most work on sputter deposition of Te02 use the oxygen flow percentage to tune the stoichiometric properties of the films. Di Giulio et al. [54] reported the properties of substoichiometric oxide 

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Thin-film media can be made by various technologies, eg, sputtered deposited Co—Cr—X films for longitudinal appHcations, laminated media for hard disk apphcation, metal evaporated tape, and multilayers for possible appHcations in magnetooptic recording. 

Metallization layers are generally deposited either by CVD or by physical vapor deposition methods such as evaporation (qv) or sputtering. In recent years sputter deposition has become the predominant technique for aluminum metallization. Energetic ions are used to bombard a target such as soHd aluminum to release atoms that subsequentiy condense on the desired substrate surface. The quaUty of the deposited layers depends on the cleanliness and efficiency of the vacuum systems used in the process. The mass deposited per unit area can be calculated using the cosine law of deposition ... 

In the sputtering process, each surface atomic layer is removed consecutively. If there is no diffusion in the target, the composition of the vapor flux leaving the surface is the same as the composition of the bulk of the material being sputtered, even though the composition of the surface may be different from the bulk. This allows the sputter deposition of alloy compositions, which can not be thermally vaporized as the alloy because of the greatly differing vapor pressures of the alloy constituents. 

The first SERS experiments were performed with electrochemically roughened electrodes and metal colloids, and many other types of suitable SERS substrates are known - e.g. metal island films, metal films over nanoparticles (see Fig. 4.58, below) or rough substrates, gratings, and sputter-deposited metal particles. 

Appropriate metal particles can be sputter-deposited on almost any support which can be exposed to vacuum. 

HANDBOOKOF SPUTTER DEPOSITION TECHNOLOGY by Kiyotaka Wasa and Shigeru Hayakawa... 

Wasa, K., and Hayakawa, S., Handbook of Sputter Deposition Technology, Noyes Publications, Park Ridge, NJ (1992)... 

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. 

In order to achieve the enhanced strength, atomically sharp A IB interfaces are needed for the mechanism proposed by Koehler. The multilayer hlms should be deposited under a relative low temperature in order to avoid the interdiffusion between the layers. Thus, PVD techniques such as evaporation and sputtering deposition are the reasonable methods to fabricate multilayer hlms. There are several ways to achieve the alternate deposition of the composing layers A and hxed substrate position mode, repeated substrate po-... 

Homogeneous deposition of ultrafine metal particles on the surfaces of fine powder is not easy using PVD. A device for stirring the powder support in a vacuum chamber is needed to avoid heterogeneous deposition. Sputter deposition units equipped with stirring powder supports have already been adapted for the industrial production of Ti02 and carbon-supported gold catalysts by 3M [35]. 

Sputtering- Deposition of copper doped (damascene) almninum interconnects, as well as diffusion barriers, and anti-reflective stacks of Ti/TiN is done by this technique. The metal is heated by an electron beam and "sputters" onto the target. Nitrogen gas is used when TiN is required. 

For comparison, a 20wt% Pt/XC72 catalysts prepared commercially by E-TEK had an average diameter of 2.6 nm. The sputter deposited Pt had a standard deviation between 0.42 and 0.49 nm, whereas the commercial E-TEK catalyst has a standard deviation of 0.79 nm. Thus, the sputtering technique creates smaller and more uniformly dispersed Pt particles than those prepared chemically. It should be noted that the Pt/C samples having low loadings prepared via sputtering did not uniformly coat... 

Ronald A. Powell and Stephen Rossnagel, PVD for Microelectronics Sputter Deposition Applied to Semiconductor Manufacturing, Volume 26, 1998. 

Carpenter et al. (1999) prepared, by sputter depositing on NaCl, a lOOnm Al film alloyed with 4 wt% Cu. This they stabilized for 1 h at 475°C, then aged for 4h at... 

Fig. 10. Time dependence of corrosion rate of Co8P and Co films, electrolessly plated and sputter-deposited onto NiP substrates, in a droplet of DI water. The results were obtained by a repeated application of the polarization resistance technique with the potential scanned at 1 mV/sec in a potential range 15 mV above and below the corrosion potential [125]. (Reprinted by permission of The Electrochemical Society). 

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