Magnetic heterostructures

New physics such as the fractional quantum Hall effect has emerged from non-magnetic semiconductor heterostructures. These systems have also been a test bench for a number of new device concepts, among which are quantum well lasers and high electron mobility transistors. Ferromagnetic 111-Vs can add a new dimension to the III-V heterostructure systems because they can introduce magnetic cooperative phenomena that were not present in the conventional III-V materials. 

The present study has illustrated the subtle interplay between geometric properties such as film thickness and the spin structure in magnetic trilayers. We hope that our results will lead to a deeper understanding of magnetic heterostructures and will help to design and improve future spintronic devices. 

Electrically detected magnetic resonance (EDMR) is conceptually similar to ODMR, i.e. the magnetic resonance is observed through spin-dependent electrical rather than optical properties of a sample. Virtually all of the EDMR in GaN-based materials reported to date has bear performed on LEDs and so the device type will serve as a basis for the organisation of this section. Three basic device types have been studied m-i-n-n+ diodes, double heterostructures (DHs) and single quantum wells (SQWs). Some details on these structures can be found elsewhere in this volume [35] and in the original work. 

K.B. Efetov, I.A. Garifullin et al., in Magnetic Heterostructures Advances and Perspectives in Spinstructures and Spin-transport, ed. by H. Zabel,... 

This chapter covers the properties and the various effects occurring in magnetic thin films and heterostructures based on the itinerant magnetism of the 3d elements. A review of the influence of hydrogen on the magnetism of the rare earth metals is given in the following chapter by A. Wildes. 

STRONG ELECTRIC FIELD TUNING OF MAGNETISM IN MULTIFERROIC HETEROSTRUCTURES... 

Strong Electric Field Tuning of Magnetism in Multiferroic Heterostructures... 

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