Solvent-developed resists

Fig. 24. Representative cross-linking systems employed in negative tone CA resists, (a) Epoxy polymers requiring organic solvent development, (b) PHOST-based cross-linking systems requiring aqueous development, (c) Monomeric cross-linking agents used in PHOST matrix polymers.

For resistance to acid conditions alone, traditional filled and unfilled bituminous solutions (which have economic advantages), chlorinated rubber and shellac have been used. Crosslinking coatings, e.g. amine-cured epoxy resins, often blended with coal-tar which develops resistance to oils and solvents, have obvious advantages on chemical plant. 

It was indicated earlier that swelling limits resolution in solvent-developed negative resists. It was also intimated that swelling effects could be minimized if there were a sufficient polarity change between the exposed and non-exposed areas of the type mentioned in the previous discussion of the PBOCST system. A similar principle was utilized by Hofer et al., (145-146) at IBM, based on ion pair formation. The resist consists of a polystyrene polymer to which tetrathiofulvalene (TTF) units have been attached. When spun down with an acceptor such as CBr4, a complex is formed which, on irradiation, undergoes an electron transfer reaction to form an ion pair ... 

Multilayer resist technology offers a number of advantages in the generation of relief images but carries the burden of process complexity. We wish to report a novel process that greatly simplifies the optical MLR sequence. This concept is based on selective surface modification of the resist with a reactive dye which masks selected areas toward later flood exposure and solvent development. 

Next, the pattern is developed by dissolving the exposed parts of the pattern in the correct solvent. The quality of the pattern (contrast) depends on both the exposure and the development time, both of which must be experimentally determined for different resist systems and substrates. Once the pattern has been exposed and developed, the actual catalytically active metal(s) or oxide(s) is vapor deposited both within the holes in the pol3mier and on top of the polymer (step 5). This metal (or oxide) film should be discontinuous at the pattern boundaries in order to make possible the liftoff the remaining resist. This requires that the resist layer is thicker than the deposited film, and that the developed resist features have an undercut or negative profile... 

An alternative to encapsulating OFETs with parylene is to use an aqueous photoresist system which does not induce the destructive phase transformation which is observed when metastable oligomeric semiconductors are exposed to other solvents. Since the resist is developed in pure water, exposure to strong bases or solvent developers is also avoided. The process shown is based on Kane, et al. [57]. 

Today, these theories of solutions and of electrolytic solutions are used in the analysis of the solvent development of exposed resists, lithographic mask degradation due to corrosion, electromigration of chromium ions, etc. 

Resists function by radiation-induced alteration of the solubility of the materials. There are two basic classes of resist materials, namely, negative and positive resists (see Fig. 4.5). Negative resists become less soluble on exposure to radiation i.e., the unexposed areas can be selectively removed by treatment with an appropriate developer solvent. Positive resists selectively undergo an increase in solubility on exposure, enabling the exposed regions to be selectively removed in the developer. Both types of resists are formulated from polymers designed to have physical and chemical properties consistent with semiconductor... 

Although the original KTFR resist based on 2,6-bis(4-azidobenzal)-4-methyl-cyclohexanone in poly(cA-isoprene) rubber resin that dominated the IC industry between 1957 and 1972 was organic solvent developed, in the 1980s, water-processable azide resists were described by Nonogaki and co-workers. These... 

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