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Solids, conductance interfaces

One of the most important advances in electrochemistry in the last decade was tlie application of STM and AFM to structural problems at the electrified solid/liquid interface [108. 109]. Sonnenfield and Hansma [110] were the first to use STM to study a surface innnersed in a liquid, thus extending STM beyond the gas/solid interfaces without a significant loss in resolution. In situ local-probe investigations at solid/liquid interfaces can be perfomied under electrochemical conditions if both phases are electronic and ionic conducting and this... [Pg.1948]

Tao et al. [32] pioneered a technique based on the formation of single molecular junctions between the tip of an STM and a metal substrate. The method was adapted by other groups, modified and applied to a large number of molecular conductance studies at (electrified) solid/liquid interfaces [33, 113-119]. For details we refer to Sect. 2.3. [Pg.126]

For instance, the more efficiently the photoholes are trapped from the valence band of an n-type semiconductor, the higher is the probability that the photoelectrons in the conduction band reach the surface and can reduce a thermodynamically suitable electron acceptor at the solid-liquid interface. This is illustrated with an example taken from a paper by Frei et al, 1990. In this example methylviologen, MV2+, acts as the electron acceptor and TiC>2 as the photocatalyst. Upon absorption of light with energy equal or higher than the band-gap energy of Ti02, a photoelectron is formed in the conduction band and a photohole in the valence band ... [Pg.349]

This analysis starts with the assumption that melting occurs in all four melt films that surround the solid bed. The initial analysis will be carried out for Film C in Fig. A6.1. The film is located between the barrel and the solid bed interface. This analysis describes the viscous energy dissipation in the film and the energy conduction from the barrel wall and how they relate to the melting flux at the solid bed-melt interface. [Pg.721]

Scanning tunneling (STM) was invented a decade ago by Binnig and Rohrer [72], and was first applied to the solid-liquid interface by Sonnenfeld and Hansma in 1986 [73]. Since then, there have been numerous applications of STM to in situ electrochemical experiments [74-76]. Because the STM method is based on tunneling currents between the surface and an extremely small probe tip, the sample must be reasonably conductive. Hence, STM is particularly suited to investigations of redox and conducting polymer-modified electrodes [76,77],... [Pg.430]

Figure 1. Band Structure in a n-type Semiconductor A. Solid State. B. In contact with a liquid phase redox couple (0/R). IL=energy of the conduction band. Vertical line indicates solid-liquid interface. CB= conduction band VB = valence band. Figure 1. Band Structure in a n-type Semiconductor A. Solid State. B. In contact with a liquid phase redox couple (0/R). IL=energy of the conduction band. Vertical line indicates solid-liquid interface. CB= conduction band VB = valence band.
Some of the very interesting applications of these layered intercalates are in material design [3], ion exchange [4], catalysis [5], in the study of quantum-sized semiconductor particles [6], assembly of molecular multilayers at solid-liquid interfaces [7], designer electrode surfaces [8], preparation of low-dimensional conducting polymers [9], and so forth. [Pg.508]

The rate of heat conduction out the solid-melt interface will be... [Pg.321]


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See also in sourсe #XX -- [ Pg.65 ]




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