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Silver point defects

The ultimate trapping site for a photoelectron is influenced by the high dielectric constant of silver haUde (ca 12.5, 11.15, and 7.15 for AgBr, AgCl, and P-AgI, respectively), the negative surface charge, and relative trap depths. Interior traps located at point defects on dislocation lines are probably not as... [Pg.446]

Fig. 9. Schematic of a two-dimensional cross section of an AgBr emulsion grain showing the surface and formation of various point defects A, processes forming negative kink sites and interstitial silver ions B, positive kink site and C, process forming a silver ion vacancy at a lattice position and positive kink... Fig. 9. Schematic of a two-dimensional cross section of an AgBr emulsion grain showing the surface and formation of various point defects A, processes forming negative kink sites and interstitial silver ions B, positive kink site and C, process forming a silver ion vacancy at a lattice position and positive kink...
Dick and Styrus [63] report real-time resistivity measurements on shoek-loaded silver foils. The inferred vaeaney eoneentration is 1.5 x 10 per atomie site for samples shoek loaded to 10 GPa. The eombined effect of point-defect generation and reeombination to form vaeaney clusters, for example, can be influential on pulse-duration effeets such reload, release, and recovery. This topie has not yet reeeived the degree of experimental study that it deserves. [Pg.247]

Fig. 5.18. The resistivity of shock-compressed silver foils in excess of that caused by pressure is shown as a function of shock stress. This excess is thought to be due to shock-induced concentrations of point defects ([75D01], after Graham [81G02]). Fig. 5.18. The resistivity of shock-compressed silver foils in excess of that caused by pressure is shown as a function of shock stress. This excess is thought to be due to shock-induced concentrations of point defects ([75D01], after Graham [81G02]).
Cul) is not due to point defects but to partial occupation of crystallographic sites. The defective structure is sometimes called structural disorder to distinguish it from point defects. There are a large number of vacant sites for the cations to move into. Thus, ionic conductivity is enabled without use of aliovalent dopants. A common feature of both compounds is that they are composed of extremely polarizable ions. This means that the electron cloud surrounding the ions is easily distorted. This makes the passage of a cation past an anion easier. Due to their high ionic conductivity, silver and copper ion conductors can be used as solid electrolytes in solid-state batteries. [Pg.432]

A somewhat different situation is found in the type of point defect known as a Frenkel defect. In this case, an atom or ion is found in an interstitial position rather than in a normal lattice site as is shown in Figure 7.17. In order to position an atom or ion in an interstitial position, it must be possible for it to be close to other lattice members. This is facilitated when there is some degree of covalence in the bonding as is the case for silver halides and metals. Accordingly, Frenkel defects are the dominant type of defect in these types of solids. [Pg.242]

Despite the fact that not all details of the photographic process are completely understood, the overall mechanism for the production of the latent image is well known. Silver chloride, AgBr, crystallizes with the sodium chloride structure. While Schottky defects are the major structural point defect type present in most crystals with this structure, it is found that the silver halides, including AgBr, favor Frenkel defects (Fig. 2.5). [Pg.59]

It is important that the copper is in the monovalent state and incorporated into the silver hahde crystals as an impurity. Because the Cu+ has the same valence as the Ag+, some Cu+ will replace Ag+ in the AgX crystal, to form a dilute solid solution Cu Agi- X (Fig. 2.6d). The defects in this material are substitutional CuAg point defects and cation Frenkel defects. These crystallites are precipitated in the complete absence of light, after which a finished glass blank will look clear because the silver hahde grains are so small that they do not scatter light. [Pg.63]

Photochromic behavior depends critically upon the interaction of two point defect types with light Frenkel defects in the silver halide together with substitutional Cu+ impurity point defects in the silver halide matrix. It is these two defects together that constitute the photochromic phase. [Pg.63]

At all temperatures above 0°K Schottky, Frenkel, and antisite point defects are present in thermodynamic equilibrium, and it will not be possible to remove them by annealing or other thermal treatments. Unfortunately, it is not possible to predict, from knowledge of crystal structure alone, which defect type will be present in any crystal. However, it is possible to say that rather close-packed compounds, such as those with the NaCl structure, tend to contain Schottky defects. The important exceptions are the silver halides. More open structures, on the other hand, will be more receptive to the presence of Frenkel defects. Semiconductor crystals are more amenable to antisite defects. [Pg.65]

Figure 3.1 Electron micrograph showing a dislocation in silver, imaged as a dark line. The small triangular features that decorate the dislocation are stacking faults formed by the aggregation of point defects. [From W. Sigle, M. L. Jenkins, and J. L. Hutchison, Phil. Mag. Lett., 57 267 (1988). Reproduced by permission of Taylor and Francis, http //www.informa world.com.]... Figure 3.1 Electron micrograph showing a dislocation in silver, imaged as a dark line. The small triangular features that decorate the dislocation are stacking faults formed by the aggregation of point defects. [From W. Sigle, M. L. Jenkins, and J. L. Hutchison, Phil. Mag. Lett., 57 267 (1988). Reproduced by permission of Taylor and Francis, http //www.informa world.com.]...
In terms of formal point defect terminology, it is possible to think of each silver or copper ion creating an instantaneous interstitial defect and a vacancy, Ag and VAg, or Cu and Vcu as it jumps between two tetrahedral sites. This is equivalent to a high and dynamic concentration of cation Frenkel defects that continuously form and are eliminated. For this to occur, the formation energy of these notional defects must be close to zero. [Pg.270]

Point defects. Point defects (Fig. 5.1) are limited to a single point in the lattice, although the lattice will buckle locally so that the influence of point defects may spread quite far. A Frenkel defect consists of a misplaced interstitial atom and a lattice vacancy (the site the atom should have occupied). For example, silver bromide, which has the NaCl structure, has substantial numbers of Ag+ ions in tetrahedral holes in the ccp Br array, instead of in the expected octahedral holes. Frenkel defects are especially common in salts containing large, polarizable anions like bromide or iodide. [Pg.96]

The ionic charge carriers in ionic crystals are the point defects.1 2 23,24 They represent the ionic excitations in the same way as H30+ and OH-ions are the ionic excitations in water (see Fig. 1). They represent the chemical excitation upon the perfect crystallographic structure in the same way as conduction electrons and holes represent electronic excitations upon the perfect valence situation. The fact that the perfect structure, i.e., ground structure, of ionic solids is composed of charged ions, does not mean that it is ionically conductive. In AgCl regular silver and chloride ions sit in deep Coulomb wells and are hence immobile. The occurrence of ionic conductivity requires ions in interstitial sites, which are mobile, or vacant sites in which neighbors can hop. Hence a superionic dissociation is necessary, as, e.g. established by the Frenkel reaction ... [Pg.5]

For jumps involving single point defects, is accurately known for the different crystal structures. Ionic conductivity measurements, coupled with other diffusion measurements, have proved to represent a very powerful method for identifying diffusion mechanisms. However, the requirement for single-crystal samples proved to be very restrictive in terms of the materials that could be investigated, and the approach has been used successfully only for very simple systems. Examples include the combination of conductivity and diffusion in the study of alkali and silver halides [226], and the combination of conductivity and NMR in the study of barium fluoride [219]. [Pg.108]

At room temperature [AgJ] would be equal to or 8.10 " cm in stoichiometric AgBr. The concentration of impurities (0.1-1 ppm) is much higher than the thermally generated point defect concentration and this means that the interstitial silver ion concentration ( 10 cm ) is much higher than the intrinsic value. To control the defect concentration in AgBr suitable dopands are introduced ... [Pg.367]

By comparison, the situation is much simpler in ionic crystals with comparatively low degrees of disorder, in which the mobile point defects may be regarded as random walkers. An example of such a material is crystalline silver bromide at200°C[l]. [Pg.372]

It has been demonstrated that the classical equihbiimn defect chemical concepts derived for binary compounds can be apphed to ternary and multinary compoimds. In the case of multicomponent materials, the space charge effects will become very important in cases in which the dimensions are no longer large compared with the thickness of the space charge layers, as in extremely thin films or in stractirral and functional ceramics with crystallites of nanometer dimensiorts. The formation of latent images in silver halide photography represents a prelude to effects of point defects in nanostractured materials, and is related to enlarged concentrations of point defects in botmdary layers. [Pg.196]


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See also in sourсe #XX -- [ Pg.96 ]

See also in sourсe #XX -- [ Pg.96 ]




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