Silicone temperature dependence

Mehra RM, Agarwal V, Singh VA, Mathur PC (1998) Unified model for the luminescence and transport data in self-supporting porous silicon. J Appl Phys 83 2235 Mikrajuddin, Shi FG, Okuyama K (2000) Electrical conduction in porous silicon temperature dependence. Microelectron J 31 187... 

Temperature The level of the temperature measurement (4 K, 20 K, 77 K, or higher) is the first issue to be considered. The second issue is the range needed (e.g., a few degrees around 90 K or 1 to 400 K). If the temperature level is that of air separation or liquefact-ing of natural gas (LNG), then the favorite choice is the platinum resistance thermometer (PRT). Platinum, as with all pure metals, has an electrical resistance that goes to zero as the absolute temperature decreases to zero. Accordingly, the lower useful limit of platinum is about 20 K, or liquid hydrogen temperatures. Below 20 K, semiconductor thermometers (germanium-, carbon-, or silicon-based) are preferred. Semiconductors have just the opposite resistance-temperature dependence of metals—their resistance increases as the temperature is lowered, as fewer valence electrons can be promoted into the conduction band at lower temperatures. Thus, semiconductors are usually chosen for temperatures from about 1 to 20 K. 

Semiconductors have a considerably smaller band gap (e.g. silicon 1.17 eV). Their conductivity, which is zero at low temperatures but increases to appreciable values at higher temperatures, depends greatly on the presence of impurities or, if added advertently, dopants. This makes it possible to manipulate the band gap and tune the properties of semiconductors for applications in electronic devices [C. Kit-tel. Introduction to Solid State Physics (1976), Wiley Sons, New York N. Ashcroft and N.D Mermin, Solid State Physics (1976), Saunder College]. 

Figure 13.9 (a) Temperature dependence of p on the DMPC bilayer on glass (white) and silicon (black), (b) Dependence ofp on the molar fraction of a cationic DMTAP additive in the DMPC bilayer. Adapted from Ref [48] with permission. 

The final question we shall consider here has to do with the extrapolation of the solubility of hydrogen in silicon to lower temperatures. Extrapolation of a high-temperature Arrhenius line, e.g., from Fig. 11, would at best give an estimate of the equilibrium concentration of H°, or perhaps of all monatomic species, in intrinsic material the concentration of H2 complexes would not be properly allowed for, nor would the effects of Fermi-level shifts. Obviously the temperature dependence of the total dissolved hydrogen concentration in equilibrium with, say, H2 gas at one atmosphere, will depend on a number of parameters whose values are not yet adequately known the binding energy AE2 of two H° into H2 in the crystal, the locations of the hydrogen donor and acceptor levels eD, eA, respectively, etc. However, the uncertainties in such quantities are not so... 

We will first describe the results obtained for n-type GaAs doped with silicon and then those on p-type GaAs and InP, trying to show how the spectroscopic results correlate with the electrical measurements to provide a consistent picture of the neutralization of dopants by hydrogen in III-V semiconductors. After considerations on the temperature dependence of the widths and positions of the H-related lines, we will discuss the occurrence and origin of other vibration lines associated also with hydrogen in as grown bulk and epitaxial III-V compounds. 

MJ Powell, C van Berkel, and JR Hughes, Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors, Appl. Phys. Lett., 54 1323-1325, 1989. 

The temperature dependence of meso PS resistivity can be understood if Coulomb blockade effects are taken into account. For a silicon nanocrystallite to become conducting, it must first overcome the Coulomb blockade barrier, EB [Lel4, Hal4, Mi8] ... 

A molecular structure, similar to that of hexasilylated benzene derivative 229, was obtained from tetracyclic hexasilylbenzene 230 by Kira, Sakurai and coworkers, where the six silicon centres are incorporated in three five-membered ring systems (Scheme 80) °. In dimetalated compound 231, two lithium centres, coordinated by a quinuclidine ligand each, are capping the phenyl ring plane from both sides in the solid state. Moreover, it could be found that compound 231 has a thermally accessible triplet state, investigated by temperature-dependent ESR spectroscopy °°. 

Tischler, J. Z., Temperature Dependence of Higher Order Forbidden Reflections in Silicon and Germanium using Synchrotron Radiation, Thesis, Cornell University, Ithaca, NY (1983). 

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