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Silicon processing strategy

OFETs stand at a crossroad today. Performance has, by many metrics, exceeded that of amorphous silicon. Several industrially scalable processing strategies have been developed, and it is quite likely that the cost and energetic input of such processes is significantly less than that incurred for amorphous silicon. Industrial acceptance, however, has been limited. It remains one of... [Pg.4]

Hirao, K., Ohashi, M., Brito, M. E., and Kanzaki, S. (1993). Processing strategy for producing highly anisotropic silicon nitride./ Am. Ceram. Soc. 78 1687-1690. [Pg.289]

Novel room-temperature-vulcanized silicone mbber-organo-MMT nanocomposites were prepared by a solution intercalation process by Wang et al. [104]. A new strategy was developed by Ma et al. [105] to prepare disorderly exfoliated nanocomposites, in which a soft siloxane surfactant with a weight-average molecular weight of 1900 was adopted to modify the clay. [Pg.44]

For epitaxial silicon wafers, product design focuses on optimizing the geometry of the plasma-enhanced, chemical-vapor-deposition (PECVD) reactor. To increase productivity, and maintain acceptable thickness uniformity, on the order of 5%, a simple optimization strategy locates a design that completes the deposition in 62 s. Then, for a standard manufacturing process, the economics are driven by the wafer costs, which are provided by a vendor at 206/wafer. At a sales price of 260/epitaxial wafer, the investor s rate of return is 18.3% and the return on investment is 25.3%. [Pg.310]

The class of phosphaalkenes with isolated P=C double bonds was first synthes ized by Becker.33 His synthetic strategy starting from trimethylsilylphosphines and acyl chlorides is still the most versatile (Protocol 3). The principle is based on the easily achievable, 1,3-silatropic migration of a silyl group bonded to phosphorus to a doubly bonded element such as nitrogen, oxygen, or sulfur. The process is favoured energetically by the construction of the P=C double bond with concomitant formation of a very stable silicon-element bond. [Pg.223]


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See also in sourсe #XX -- [ Pg.668 ]




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