Silicon nitrides multilayered

Blugan, G., Orlovskaya, N., Lewis, M., Kuebler, J., Multilayer silicon nitride laminates exhibiting high fracture toughness and crack deflection, Key Eng. Mater., 280-283, 1863-1868, 2004. 

A simple way of studying the interfaces is to use multilayer samples, which contain many interfaces and to apply the techniques normally used for bulk measurements. Fig. 9.20 shows ESR data of the silicon nitride interface for such samples (Tsai, Street, Ponce and Anderson 1986b). The total thickness of each sample, 0.6 pm, and the thicknesses of the nitride and a-Si H layers are equal the only difference is in the thicknesses of the individual layers and therefore in the number of interfaces. The dependence of the ESR spin density on this parameter shows that the interfaces dominate most of the spin measurements. It is not possible, however, to separate out the effects of the top and bottom interfaces, both of which are present in equal number. The top nitride interface is presumably the main source of the signal, since it has the larger interface state density. 

Tool materials Low additive silicon nitride and same silicon nitride coated with multilayer CVD (alumina-TiCN/TiN)... 

Abele et al. 2002). In order to increase tool life, the innovative a-/p-SiA10N and p-silicon nitride cutting materials are additionally protected by TiCN/Ti and AUOs/TiN multilayer coatings, respectively (Grzesik et al. 2009 Grzesik 2008 Abele et al. 2002). 

Fig. 5 Multilayer TiCN/Ti-coated silicon nitride (a) and a-/(3-SiA10N with gradient characteristic (b) inserts (www.ceramtec.com)...

FIGURE 9.1.14 SEM micrographs of multilayered silicon nitrides (a) dense layer (b) porous layer. 

Early work in ellipsometry focused on improving the technique, whereas attention now emphasizes applications to materials analysis. New uses continue to be found however, ellipsometry traditionally has been used to determine film thicknesses (in the rang 1-1000 nm), as well as optical constants. " Common systems are oxide and nitride films on silicon v ers, dielectric films deposited on optical sur ces, and multilayer semiconductor strucmres. 

The multilayer nanocomposite films containing layers of quasi-spherical Fe nanoparticles (d — 5.8 nm) separated by dielectric layers from boron nitride (BN) are synthesized by the repeated alternating deposition of BN and Fe onto a silicon substrate [54]. In this work the authors managed to realize the correlation in the arrangement of Fe nanoparticles between the layers the thin BN layer deposited on the Fe layer has a wave-like relief, on which the disposition of Fe nanoparticles is imprinted as a result, the next Fe layer deposited onto BN reproduces the structure of the previous Fe layer. Thus, a three-dimensional ordered system of the nanoparticles has been formed on the basis of the initial ordered Fe nanoparticle layer deposited on silicon substrate [54]. The analogous three-dimensional structure composed of the Co nanoparticles layers, which alternate the layers of amorphous A1203, has been obtained by the PVD method [55]. 

Transition metal carbides can be used as diffusion barriers like transition metal nitrides in multilayer metallization schemes for integrated circuits. Layers on the order of lOOnm are applied and are produced by sputtering methods. The high chemical stability of these transition metal carbides, especially those of group 4, are exploited to prevent interaction of metal or component layers such as silicon, aluminum, and silicides upon thermal load in production processes. This load would cause electrical or even structural deterioration of the multilayer packages. 

Substrates made by the multilayer process from tape cast alumina have received considerable attention in recent years for multichip module (MCM) applications. An MCM consists of an array of closely packed chips on an interconnect board several inches on a side. Cofired ceramic is attractive relative to organic laminates because its thermal conductivity is almost 2 orders of magnitude higher, an important consideration in high-density circuitry. In addition both alumina and aluminum nitride ceramics are more closely matched to silicon in CTE than are organic boards. For similar reasons, alumina and AIN are attractive for ball grid array (EGA) mounting of chips. ... 

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