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Silicon nanocrystals structure

Goldstein A N 1996 The melting of silicon nanocrystals submicrometre thin-film structures derived from nanocrystal precursors Appi. Phys. A 62 33... [Pg.2922]

In a Si zero-dimensional system the strong quantum confinement can increase the optical infrared gap of bulk Si and consequently shift the optical transition energies towards the visible range [65,66]. This is the reason for which silicon nanocrystals (Si-NCs) with a passivated surface are used as the natural trial model for theoretical simulations on Si based light emitting materials, such as porous Si or Si nanocrystals dispersed in a matrix. In this section we present a comprehensive analysis of the structural, electronic and optical properties of Si-NCs as a function of size, symmetry and surface passivation. We will also point out the main changes induced... [Pg.216]

Structural Properties of Hydrogenated Silicon Nanocrystals and Nanoclusters... [Pg.363]

Zhou ZY, Brus L, Friesner R (2003) Electronic structure and luminescence of 1.1- and 1.4-nm silicon nanocrystals oxide shell versus hydrogen passivation. Nano Lett 3 163-167... [Pg.51]

LIGHT-EMITTING PROPERTIES OF ERBIUM-DOPED STRUCTURES OF SILICON NANOCRYSTALS... [Pg.148]

Hannah DC, Yang J, Podsiadlo P, Chan MKY, Demortiere A, Gosztola DJ, Prakapenka VB, Schatz GC, Kortshagen U, Schaller RD (2012) On the origin of photoluminescence in silicon nanocrystals pressure-dependent structural and optical studies. Nano Lett 12 4200 205 Harun NA, Horrocks BR, Fulton DA (2011) A miniemulsion polymerization technique for encapsulation of silicon quantum dots in polymer nanoparticles. Nanoscale 3 4733-4741 Heinrich JL, Curtis CL, Credo GM, Kavanagh KL, Sailor MJ (1992) Luminescent colloidal silicon suspensions from porous silicon. Science 255 66-68 Heitmaim J, Mueller F, Zacharias M, Goesele U (2005) Silicon nanocrystals size matters. Adv Mater 17 795-803... [Pg.433]

Hessel CM, Henderson EJ, Kelly JA, Cavell RG, Sham TK, Veinot JCG (2008) Origin of luminescence from silicon nanocrystals a near edge X-ray absorption fine structure (NEXAFS) and X-ray excited optical luminescence(XEOL) study of oxide-embedded and free-standing systems. J Phys ChemC 112 14247-14254... [Pg.434]

Valenta J, Janda P, Dohnalova K et al (2005) Colloidal suspensions of silicon nanocrystals from single nanocrystals to photonic structures. Opt Mater 27 1046-1049 Walker BG, Hendy SC, Gebauer R, Tdley RD (2008) Application of Lanczos-based time-dependent density-functional theory approach to semiconductor nanoparticle quantum dots. Eur Phys J B... [Pg.435]

Pawlak BJ, Gregorkiewicz T, Ammerlaan CAJ, Takkenberg W, Tichelaar FD, Alkemade PEA (2001) Experimental investigation of band structure modification in silicon nanocrystals. Phys Rev B 64 115308... [Pg.591]

Pavesi L, Turan R (eds) (2010) Silicon nanocrystals, Section 14 silicon nanocrystals in porous silicon and applications. Federal Republic of Germany Reece PJ, Lerondel G, Zheng WH, Gal M (2002) Optical microcavities with subnanometer linewidths based on porous silicon. Appl Phys Lett 81 4895 Robbie K, Beydaghyan G, Brown T, Dean C, Adams J, Buzea C (2004) Ultrahigh vacuum glancing angle deposition system for thin films with controlled three-dimensional nanoscale structure. Rev Sci Instrum 75(4) 1089... [Pg.726]

In Silicon nanocrystals (2010). WILEY-VCH Verlag GmbH Co. KGaA, Weinheim Perez K, Estevez JO, Mendez-Blas A, Arriaga J (2012) Localized defect modes in dual-periodical multilayer structures based on porous silicon. J Opt Soc Am B 29(4) 538-542 Prasad PN (ed) (2004) Chapter 9. Photonic crystals. In Nanophotonic. John Wiley Sons, Inc., Hoboken, New Jersey, Canada... [Pg.764]

Most of the semiempirical tight-binding methods for nanostructures are based on the parametrization of bulk systems. It consists of an iterative fitting procedure, performed on the tight-binding parameters, to match the bulk silicon band structure calculated using the most advanced techniques [21]. The as-calculated parameters are then applied to the study of the electronic properties of silicon nanostructures. When the nanostructures are well passivated, the surface is expected to play a minor role, and the main electronic and optical properties are determined by the nanocrystal core. [Pg.251]

We report a representative picture to show the tight-binding results for silicon nanocrystals. Figure 5.1 shows the absorption cross section for a set of silicon nanocrystals upon increasing their size. It can be seen that the absorption spectra move from a multipeak structure that is typical of molecules to a broad, continuous curve that is typical of bulk systems. This is due to the increase in the number of transitions, which makes a nanocrystal as a molecular system that is in the middle between a small molecule and a bulk system. An interesting feature emerges from the analysis of the first transition, defined as the transition between the HOMO and LUMO energy levels. [Pg.255]


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See also in sourсe #XX -- [ Pg.232 , Pg.233 ]




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