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Silicon microstructures, scanning electron

Bruska A, Chemook A, Schulze S, Hietschold M (1996) Cathodoluminescence and writing of optical patterns on porous silicon by scanning electron microscopy. Appl Phys Lett 68(17) 2378 Canham LT (1997) Properties of porous silicon. Institution of Engineering and Technology, London Cole MW, Harvey JF (1992) Microstructure of visibly luminescent porous silicon. Appl Phys Lett 60(22) 2800-2802... [Pg.340]

Fig. 9.10. Scanning electron micrograph of a ZnO thin film on a texture-etched silicon substrate. The ZnO microstructure is disturbed where one pyramid of the substrate borders the next pyramid... Fig. 9.10. Scanning electron micrograph of a ZnO thin film on a texture-etched silicon substrate. The ZnO microstructure is disturbed where one pyramid of the substrate borders the next pyramid...
Figure 16.14 Scanning electron microscopy images of microstructures (a) before and (b) after nitridation of a silicon compact. The nitridation reaction was conducted at 1673 K for 8 h under 0.1 MPa nitrogen pressure. Figure 16.14 Scanning electron microscopy images of microstructures (a) before and (b) after nitridation of a silicon compact. The nitridation reaction was conducted at 1673 K for 8 h under 0.1 MPa nitrogen pressure.
SEM scans the specimen surface with a high-energy electron beam. The microstructures of the deposited PAB films are studied in SEM as film surface and microtomed cross sections. For enhancing the contrast between PAB phases, partial dissolution (by solvent vapor) or erosion (by plasma treatment) may be needed. Furthermore, for preventing accumulation of the static electricity on the specimen surface, a thin layer of Au/Pt may be deposited. The specimens are placed on a platinized silicon wafer holder with a conductive adhesive copper tape. The modern SEM has high resolution. [Pg.97]


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