Silicon indium

Modifications to Precipitates. Silicon is sometimes added to Al—Cu—Mg alloys to help nucleate S precipitates without the need for cold work prior to the elevated temperature aging treatments. Additions of elements such as tin [7440-31-5] Sn, cadmium [7440-43-9] Cd, and indium [7440-74-6] In, to Al—Cu alloys serve a similar purpose for 9 precipitates. Copper is often added to Al—Mg—Si alloys in the range of about 0.25% to 1.0% Cu to modify the metastable precursor to Mg2Si. The copper additions provide a substantial strength increase. When the copper addition is high, the quaternary Al CuMg Si Q-phase must be considered and dissolved during solution heat treatment. 

Which element of each of the following pairs has the higher electron affinity (a) aluminum or indium (b) bismuth or antimony (c) silicon or lead ... 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

The thickness of a photovoltaic cell is chosen on the basis of its ability to absorb sunlight, which in turn depends on the bandgap and absorption coefficient of the semiconductor. For instance, 5 nm of crystalline silicon are required to absorb the same amount of sunlight as 0.1 nm of amorphous silicon and 0.01 nm of copper-indium diselenide. Only MBE and MOCVD are capable of producing such extremely thin films.i l... 

Figure 17. Infrared array geometry. The light sensitive material is connected at each pixel by an indium bump bond to the silicon multiplexer that reads out the charge generated by the incident light. Figure courtesy of I. McLean (UCLA).

Photovoltaic (PV) solar cells, which convert incident solar radiation directly into electrical energy, today represent the most common power source for Earth-orbiting spacecraft, such as the International Space Station, where a photovoltaic engineering testbed (PET) is actually assembled on the express pallet. The solid-state photovoltaics, based on gallium arsenide, indium phosphide, or silicon, prove capable, even if to different extents and with... 

Fig. 10. Spreading resistance profiles for silicon doped with indium, gallium, and aluminum.

Glass transition temperatures of the uv-hardened films were measured with a Perkin Elmer Model DSC-4 differential scanning calorimeter (DSC) that was calibrated with an indium standard. The films were scraped from silicon substrates and placed in DSC sample pans. Temperature scans were run from -40 to 100-200 °C at a rate of 20 ° C/min and the temperature at the midpoint of the transition was assigned to Tg. 

Transformations of (Organo)silicon Compounds Catalyzed by Indium Complexes... 

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