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Silicon-germanium alloys

T. G. Brown and D. G. Hall, Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices J. Michel, L. V. C. Assail, M. T. Morse, and L. C. Kimerling, Erbium in Silicon K Kanemitsu, Silicon and Germanium Nanoparticles... [Pg.303]

T. G. Brown and D. G. Hall, Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices... [Pg.191]

Epitaxial films frequently have superior characteristics than either polycrystalline or amorphous films. The epitaxial growth concerns a large number of materials silicon, silicon-germanium alloys, III-V compounds, binary and ternary composites, metals, etc. [Pg.159]

EINECS 231-961-6 Germane Germanium hydride Germanium tetrahydride Monogermane UN2192. A flammable, toxic, colorless gas used for the deposition of epitaxial and amorphous silicon -germanium alloys. Gas mp = -165 bp = -88 d = 2.600 LDso (mus orl) B1250 mg/kg. [Pg.303]

Chemical Vapor Deposition of Silicon-Germanium Alloy Films... [Pg.20]

The converter consists of 1,536 pairs of thermopiles made of silicon-germanium alloy (Si 85% by mass, Ge 15% by mass) with n- and p-conductivity. Each module of 16 thermopiles is mounted on the inner surface of the hermetically sealed steel vessel. To provide for a good contact on the reactor heating, each module is pressed on the reflector by gas bellows elements. On the hot side, the keyboard consists of molybdenum plates, on the cold one - of copper bridges. To prevent an electric contact (shorting), insulating plates of beryllium oxide are used on the hot and cold sides. The excess heat is removed from the reactor-converter by shaped enamel-coated copper fins with an emissivity of at least 0.9 (O Fig. 59.2). [Pg.2736]

The intermediate temperature range - up to around 850K is the regime of materials based on alloys of lead while thermoelements employed at the highest temperatures are fabricated from silicon germanium alloys and operate up to 1300K. Although the above mentioned materials... [Pg.109]

C. M. Bhandari and D.M. Rowe, Fine grained silicon germanium alloys as siqierior thermoelectric materials Proceedings 2nd International Conference on Thermoelectric... [Pg.122]

Silicon-germanium alloys There is a small deviation from Vegard s law (Fig. 4.1-4) ... [Pg.579]

M. Imai, T. Mitamura, K. Yaoita, and K. Tsuji, Reversible phase transition from amorphous state to crystal induced by pressure in silicon-germanium alloys., in Proceedings of the IVInternational Conference on High Pressure in Semiconductor Physics, D. S. Kyriakos and O. E. Valassiades, eds. 1990, pp. 2, 21,82,91. [Pg.351]

Tzoumanekas, C. and P.C. Kelires 2002, Theory of bond-length variations in relaxed, strained, and amorphous silicon-germanium alloys. Phys. Rev. B, 66(19) pp. 195209 (1-11). [Pg.343]

Efficient radiative recombination in tetrahedrally-bonded amorphous films depends critically on the presence of hydrogen which removes non-radiative recombination centers from the middle of the gap. Recent PL experiments on amorphous silicon-germanium alloys show that the intensity of the PL at low energies is independent of germanium content. This observation may require a reinterpretation of the commonly accepted explanation for the dominant PL process in these alloys. [Pg.98]

Rowe, D. M., Shukla, V. S., Savvides, N. (1981). Phonon scattering at grain boundaries in heavily doped fine-grained silicon-germanium alloys. Nature, 290, 765-766. [Pg.28]

Figure 10.4 Rutherford Backscattering Spectrometry (RBS) Spectra of Tungsten Electrode Film on a Silicon-Germanium Alloy before (upper) and after (lower) Post-deposition Diffusion... Figure 10.4 Rutherford Backscattering Spectrometry (RBS) Spectra of Tungsten Electrode Film on a Silicon-Germanium Alloy before (upper) and after (lower) Post-deposition Diffusion...
Silicon-germanium alloys have an fee Bravais lattice with the diamond structure. The alloy exhibits complete solid solubility across the entire phase space. Below, 170 K, theory suggests there could be a spinodal decomposition regime. However, the atomic mobilities at such a temperature would prevent decomposition of an existing alloy on any time scale. The Si-Ge phase diagram is shown in Figure 6.11. [Pg.262]

Unold, D. Cohen, J.D. and Fortmann, C.M. Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys , / / /. Phys. Lett., 1994 64 1714-6. [Pg.393]


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See also in sourсe #XX -- [ Pg.10 ]




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