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Silicon electron micrograph

Fig. 16. Scanning electron micrograph of a silicone mbber composite membrane. Fig. 16. Scanning electron micrograph of a silicone mbber composite membrane.
Figure 5.5. Electron micrographs of different types of diamond film grown on silicon. The white bar shows the scale in micrometres (p.m) (thousandths of a millimetre), (a) The initial stages of diamond growth on a nickel substrate, showing individual diamond crystallites nucleating in scratches and crevices created on the surface by mechanical abrasion, (b) a randomly oriented him,... Figure 5.5. Electron micrographs of different types of diamond film grown on silicon. The white bar shows the scale in micrometres (p.m) (thousandths of a millimetre), (a) The initial stages of diamond growth on a nickel substrate, showing individual diamond crystallites nucleating in scratches and crevices created on the surface by mechanical abrasion, (b) a randomly oriented him,...
Figure 4. Scanning electron micrographs of palladium features on silicon substrate as a function of laser power (measured at laser) and scan speed. Palladium acetate precursor film thickness is 1.6 pm (cw Ar+ laser - multiline mode, spot size —50 /mi). Figure 4. Scanning electron micrographs of palladium features on silicon substrate as a function of laser power (measured at laser) and scan speed. Palladium acetate precursor film thickness is 1.6 pm (cw Ar+ laser - multiline mode, spot size —50 /mi).
Fig. 2. Cross-section scanning electron micrographs of a-Si H deposited on etched crystalline silicon substrates under (a) CVD conditions, 2W, 300°C, 100% SiH4 and (b) PVD conditions, 25W, 300°C, 5% SiH4 in argon (Tsai et al., 1986). Fig. 2. Cross-section scanning electron micrographs of a-Si H deposited on etched crystalline silicon substrates under (a) CVD conditions, 2W, 300°C, 100% SiH4 and (b) PVD conditions, 25W, 300°C, 5% SiH4 in argon (Tsai et al., 1986).
Figure 13.6. Effects of stress concentration on breakability. Scanning electron micrographs (top frames) showing breaks of anchored silicon beams etched with (a) plasma, (b) KOH and isopropyl alcohol, and (c) KOH and optical micrographs (bottom frames) of printing results that demonstrate the relative ease of breakability, or the ability for a stamp to separate elements from the anchoring structures in each system. (Reprinted with permission from Ref. 54. Copyright 2007 American Institute of Physics.)... Figure 13.6. Effects of stress concentration on breakability. Scanning electron micrographs (top frames) showing breaks of anchored silicon beams etched with (a) plasma, (b) KOH and isopropyl alcohol, and (c) KOH and optical micrographs (bottom frames) of printing results that demonstrate the relative ease of breakability, or the ability for a stamp to separate elements from the anchoring structures in each system. (Reprinted with permission from Ref. 54. Copyright 2007 American Institute of Physics.)...
Fig. 8.5 A scanning electron micrograph of a silicon dioxide mold with reverse patterns the left and right trenches create a bus and a microring waveguides, respectively. The high aspect ratio protruded wall between trenches is used to stamp out a narrow coupling gap. Reprinted from Ref. 42 with permission. 2008 American Vacuum Society... Fig. 8.5 A scanning electron micrograph of a silicon dioxide mold with reverse patterns the left and right trenches create a bus and a microring waveguides, respectively. The high aspect ratio protruded wall between trenches is used to stamp out a narrow coupling gap. Reprinted from Ref. 42 with permission. 2008 American Vacuum Society...
Fig. 31. Scanning electron micrograph (SEM) and scanning Auger element maps for an array of four strips of gold numbers 1,3,6, and 8) and four of aluminum/alumina (numbers 2, 4, 5, and 7) on a silicon nitride substrate that was exposed to a mixture of HS(CH2),, C1 and CF3(CF2)8C02H in isooctane. The SEM and element maps are for the array viewed from above the schematic of the device (the height of the strips is not drawn to scale) is a side view [175]... Fig. 31. Scanning electron micrograph (SEM) and scanning Auger element maps for an array of four strips of gold numbers 1,3,6, and 8) and four of aluminum/alumina (numbers 2, 4, 5, and 7) on a silicon nitride substrate that was exposed to a mixture of HS(CH2),, C1 and CF3(CF2)8C02H in isooctane. The SEM and element maps are for the array viewed from above the schematic of the device (the height of the strips is not drawn to scale) is a side view [175]...
FIGURE 18.2 Scanning electron micrographs of silicon microneedles, (a) Silicon microneedles micro-fabricated using a modified form of the BOSCH deep reactive ion etching process. The microfabrication process was accomplished at CCLRC Rutherford Appleton Laboratory (Chilton, Didcot, Oxon, UK). The wafer was prepared at the Cardiff School of Engineering, Cardiff University, UK. Bar = 100 pm (b-d) platinum-coated silicon microneedles prepared using a wet-etch microfabrication process performed at the Tyndall National Institute, Cork, Ireland. Bar = 1 mm (b), 100 pm (c,d). [Pg.341]

FIGURE 18.3 Scanning electron micrographs of epidermal membrane treated with dry-etch and wet-etch silicon microneedles. The epidermal membrane, consisting of stratum corneum and viable epidermis, was obtained by heat separation of full-thickness human breast skin. The tissue was immersed in distilled water preheated to 60°C for 60 s and the upper layers carefully peeled off from the dermal layer using tweezers. Epidermal membranes were treated with microneedles for 30 s at an approximate pressure of 2 kg/cm2. (a) Dry-etch microneedle-treated epidermal membrane. Bar = 200 pm (b) wet-etch microneedle-treated epidermal membrane. Bar = 500 pm. [Pg.341]

The first experimental investigation and performance demonstration of an integrated liquid chromatography chip was carried out by Ocvirk et al. [84]. The device is shown schematically in Fig. 15 and comprises a split injector, a smallbore separation column, a frit, and a detector cell, all integrated in a monolithic manner. An electron micrograph of the silicon chip is also depicted in Fig. 15. The whole device was composed of two 350 pm Si chips and a 50 pm interme-... [Pg.78]

Fig. 1. The accuracy of e-beam lithography is illustrated in the scanning electron micrograph (top). The size of the features formed in the silicon oxide is 0.5 pm and the typical animal cell (a fibroblast) has a diameter of 20 pm. This kind of cell adheres actively to surfaces, forming thin filopodia which here have all attached to the micro-hillocks. Semiconductor technology is capable of manufacturing micro-electrodes, sensors, pores and electronic networks with sizes smaller than that of the cell. The lower illustration summarises the main detection and measuring methods currently in use... Fig. 1. The accuracy of e-beam lithography is illustrated in the scanning electron micrograph (top). The size of the features formed in the silicon oxide is 0.5 pm and the typical animal cell (a fibroblast) has a diameter of 20 pm. This kind of cell adheres actively to surfaces, forming thin filopodia which here have all attached to the micro-hillocks. Semiconductor technology is capable of manufacturing micro-electrodes, sensors, pores and electronic networks with sizes smaller than that of the cell. The lower illustration summarises the main detection and measuring methods currently in use...
Fig. 17. a A scanning electron micrograph of square pores etched in a 3 micrometer thick silicon membrane. The pores were produced by anisotropic etching and their width on this side of the membrane is 6 pm. Cells (fibroblasts 3T3) attach to the surface and migrate over the pores, b Electrodes are placed on either side of the membrane and a constant current passed through it (mainly through the pores). The presence of cells is easily detected and movements of cell filopodia of less than 100 nm and the passive electric properties of the cell body can be determined by analysis of the signal fluctuations and impedance... [Pg.108]

Fig. 23 Scanning electron micrograph of supermicelles deposited on a silicon wafer. Reprinted with permission from ref [99]. Copyright (2003) American Chemical Society... Fig. 23 Scanning electron micrograph of supermicelles deposited on a silicon wafer. Reprinted with permission from ref [99]. Copyright (2003) American Chemical Society...
Fig. 9.10. Scanning electron micrograph of a ZnO thin film on a texture-etched silicon substrate. The ZnO microstructure is disturbed where one pyramid of the substrate borders the next pyramid... Fig. 9.10. Scanning electron micrograph of a ZnO thin film on a texture-etched silicon substrate. The ZnO microstructure is disturbed where one pyramid of the substrate borders the next pyramid...
A sample of conunencial MFI from Zeolist was used, with a silicon aluminium ratio (Si/AI) of 100, the crystals do not present a regular shape. On figure 2 Scanning Electron Micrograph (SEM) of MFI crystals is presented. The sample was calcined for 6h at 873K. [Pg.225]

Scanning electron microscopy (SEM) has been used to visualize specific regions of intimate contact between the ventral sur ce of adherent cells and an underlying sur ce. Polycaibcmate and silicone wafer sur ces were coated with sulphonated polyelectrolytes (SPE) to improve their blood compatibility. Figure 5 indicates the scanning electron micrographs of the adhered platelets (fiom PRP, 1 hour) on polycarbonate and SPE modified polycarbonate. [Pg.371]

Fig 6. Scanning electron micrographs of adhered platelets to (A) Silicone wafer and (B) Polyelectrolyte coated silicone wafer, on exposure to PRP for 2 hours. [Pg.372]

FIGURE 20.17 (A) X-ray diffraction spectra and (B) cross-sectional scanning electron micrograph image of 160 nm Ta(Al)N(C) film on a patterned silicon wafer. (From AUen, R, Juppo, M., Ritala, M., Sajavaara, T., Keinonen, J., and Leskela, M., J. Electrochem. Soc., 148, G566, 2001.)... [Pg.360]

Figure 10-9 Microfiltration device made in silicon by reactive-ion etching. Upper picture shows low magnification of electron micrograph. Each pillar is 90 mm high. Lower picture shows detail of the gaps between filter elements (3.5 mm). Each pillar is 20 mm long and 10 mm wide, which allows easy passage of RBCs but precludes large granulocytes. (Courtesy Wilding Kricka LJ, University of Pennsylvania.)... Figure 10-9 Microfiltration device made in silicon by reactive-ion etching. Upper picture shows low magnification of electron micrograph. Each pillar is 90 mm high. Lower picture shows detail of the gaps between filter elements (3.5 mm). Each pillar is 20 mm long and 10 mm wide, which allows easy passage of RBCs but precludes large granulocytes. (Courtesy Wilding Kricka LJ, University of Pennsylvania.)...
Another example of fibre-like deposits is given by the electrodeposition of [Per][Au(mnt)2] (Per = perylene. Figure 4.1) on a silicon anode which leads to a uniform black film. Scanning electron micrographs reveal that the film is made of nanowires (Figure 4.39). The diameter of an individual nanowire is in the 35-55 nm range, smaller than the [TTF][Ni(dmit)2]2 fibres previously described. The conductivity of... [Pg.263]


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