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Silicon dioxide properties

Silicon dioxide properties depend on the techniques used for oxide growth. The index of refraction for dry oxides decreases when higher processing temperatures are used whereas the oxide density increases. [Pg.347]

Oxidation of Silicon. Silicon dioxide [7631-86-9] Si02, is a basic component of IC fabrication. Si02 layers are commonly used as selective masks against the implantation or diffusion of dopants into silicon. Si02 is also used to isolate one device from another. It is a component of MOS devices, and provides electrical isolation of multilevel metalliza tion stmctures (12). A comparison of Si and Si02 properties is shown in Table 1. [Pg.346]

Silicon dioxide [7631-86-9] Si02, exists in both crystalline and glassy forms. In the former, the most common polymorph is a-quartz (low quartz). All commercial appHcations of crystalline quartz use a-quartz, which is stable only below ca 573°C at atmospheric pressure. Some of the properties of a-quartz are Hsted in Table 1. [Pg.518]

Ceramic materials are typically noncrystalline inorganic oxides prepared by heat-treatment of a powder and have a network structure. They include many silicate minerals, such as quartz (silicon dioxide, which has the empirical formula SiO,), and high-temperature superconductors (Box 5.2). Ceramic materials have great strength and stability, because covalent bonds must be broken to cause any deformation in the crystal. As a result, ceramic materials under physical stress tend to shatter rather than bend. Section 14.22 contains further information on the properties of ceramic materials. [Pg.315]

Silicon dioxide (Si02), also known as silica, is a major industrial material with many applications particularly in the semiconductor industry in the form of coatings, which are produced mostly by CVD. It is an excellent electrical insulator with very low thermal expansion and good resistance to thermal shock. Its characteristics and properties are summarized in Table 11.4. [Pg.302]

A recent competitor to CVD in the planarization of silicon dioxide is the sol-gel process, where tetraethylorthosilicate is used to form spin-on-glass (SOG) films (see Appendix). This technique produces films with good dielectric properties and resistance to cracking. Gas-phase precipitation, which sometimes is a problem with CVD, is eliminated. [Pg.373]

A desirable glass melts at a reasonable temperature, is easy to work with, and yet is chemically inert. Such a glass can be prepared by adding a third component that has bonding characteristics intermediate between those of purely ionic sodium oxide and those of purely covalent silicon dioxide. Several different components are used, depending on the properties desired in the glass. [Pg.798]

Any two samples of a particular mineral, whatever their source or place of origin, have the same basic composition and characteristic crystal structure moreover, no two different minerals have identical chemical composition and crystal structure (see Textboxes 8 and 21). Quartz, for example, is a common and abundant mineral composed of silicon dioxide, a compound that occurs naturally not only as quartz but also in other crystal structures, known as polymorphs (polymorphs are minerals that have the same chemical composition but different crystal structure), some of which, listed in Table 23, have been used for a variety of purposes. The crystal structure, which is essential for the characterization of solid materials, is just one of a wide range of physical properties, that is, properties not involving chemical differences, which provide convenient criteria for characterizing and identifying solids. [Pg.39]

Flint is a hard and easily split variety of the mineral quartz (composed of silicon dioxide), which occurs not only as flint but also in a wide range of other varieties. Some of these exhibit different colors and colored patterns and have characteristic crystalline structures, while others are amorphous (see Textbox 21). In all its varieties, nevertheless, the hardness of quartz is very high, being graded as 7 on the Mohs scale (see Textbox 23). Almost all varieties are either transparent or translucent and display a distinctive luster. These properties made quartz an attractive material for making ornamental... [Pg.118]

Aluminum coating (for surface fluorescence quenching see Section 13.5.5) can be accomplished in a standard vacuum evaporator the amount of deposition can be made reproducible by completely evaporating a premeasured constant amount of aluminum. After deposition, the upper surface of the aluminum film spontaneously oxidizes in air very rapidly. This aluminum oxide layer appears to have some similar chemical properties to the silicon dioxide of a glass surface it can be derivatized by organosilanes in much the same manner. [Pg.320]

Glidants (e.g., colloidal silicon dioxide, talc) may need to be added to achieve desired flow properties, especially when the drug/filler ratio is relatively high. Usually, there is an optimum concentration of glidant for best flow, often less than 1% for the colloidal silicas (14,15). The following order of effectiveness of glidants has been reported for two powder systems fine silica > magnesium stearate > purified talc (16). [Pg.413]

Indeed, recently SEDDS themselves have been delivered as liquids absorbed onto powders such as colloidal silicon dioxide or microcrystalline cellulose (Nazzal et al., 2002). Selection of the absorbent was obviously critical to the performance of the system but, as an aside, it seems that this approach negates the rapid release properties of a SEDDS. It will be interesting to follow the future of this technology. [Pg.204]


See other pages where Silicon dioxide properties is mentioned: [Pg.1884]    [Pg.499]    [Pg.269]    [Pg.368]    [Pg.302]    [Pg.797]    [Pg.54]    [Pg.310]    [Pg.28]    [Pg.54]    [Pg.139]    [Pg.140]    [Pg.233]    [Pg.162]    [Pg.134]    [Pg.36]    [Pg.350]    [Pg.6]    [Pg.417]    [Pg.3]    [Pg.29]    [Pg.114]    [Pg.115]    [Pg.156]    [Pg.497]    [Pg.499]    [Pg.245]    [Pg.417]    [Pg.332]    [Pg.332]    [Pg.721]    [Pg.725]   
See also in sourсe #XX -- [ Pg.430 ]

See also in sourсe #XX -- [ Pg.164 ]

See also in sourсe #XX -- [ Pg.200 ]




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